TPC8103

TRANSISTOR SILICON P CHANNEL MOS TYPE

LithiumIonBatteryApplications PortableEquipmentApplications NotebookPCs ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceONresistance:RDS(ON)=9.5m?(typ.) ?Highforwardtransferadmittance:|Yfs|=20S(typ.) ?Lowleakagecurrent:IDSS=?10μA(max)(VDS=?

TPC8103

P-Channel 30-V (D-S) MOSFET

TPCA8103

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOS4)

NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetoasmallandthinpackage ?Lowdrain-sourceON-resistance: RDS(ON)=9.4mΩ(typ.)(VGS=?10V) ?Lowleakagecurrent:IDSS=-10μA(max)(VDS=-30V) ?Enhancementmode:

TPCA8103

LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications

TPCA8103

P-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?100RgTested APPLICATIONS ?Notebook -LoadSwitch

TPCC8103

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCC8103

NoteboookPCApplicationsPortableEqipmentApplications

TPCC8103

FieldEffectTransistorSiliconP-ChannelMOSType(U-MOS??

NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetoasmallandthinpackage ?Lowdrain-sourceON-resistance: RDS(ON)=9.4mΩ(typ.)(VGS=?10V) ?Lowleakagecurrent:IDSS=-10μA(max)(VDS=-30V) ?Enhancementmode:V

TPCF8103

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIII)

TPCF8103

TRANSISTORSILICONPCHANNELMOSTYPE(U竊?OS??

SwitchingApplications DC-DCConverterApplications ?HighDCcurrentgain:hFE=100to300(IC=0.3A) ?Lowcollector-emittersaturation:VCE(sat)=0.2V(max) ?High-speedswitching:tf=100ns(typ.)