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SPP11N65C3

N-Channel MOSFET Transistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.38? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPP11N65C3

N-Channel 650 V (D-S) MOSFET

FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS)

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

SPP11N65C3

Cool MOS??Power Transistor

CoolMOS?PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)forta

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N65C3

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N65C3

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N65C3_07

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N65C3_09

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N65C3HKSA1

包裝：卷帶（TR） 類別：分立半導體產品 晶體管 - FET，MOSFET - 單個 描述：MOSFET N-CH 650V 11A TO-220

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

11N65C3

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

ISPP11N65C3

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.38? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPA11N65C3

CoolMOS??PowerTransistor

CoolMOS?PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)forta

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA11N65C3

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA11N65C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA11N65C3

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

SPA11N65C3

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPI11N65C3

iscN-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.38? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPI11N65C3

CoolMOS??PowerTransistor

CoolMOS?PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)forta

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI11N65C3

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI11N65C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    SPP11N65C3

  • 功能描述：

    MOSFET COOL MOS N-CH 650V 11A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
2021+
TO220
18260
原裝進口假一罰十
 詢價
Infineon
23+
TO-220AB
7750
全新原裝優(yōu)勢
 詢價
INFINEO
2020+
TO-220
20
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
INF進口原
17+
TO-220
6200
詢價
INFINEON
1716+
TO-220AB
8500
只做原裝進口,假一罰十
 詢價
Infineon
18+
NA
3920
進口原裝正品優(yōu)勢供應
 詢價
INFINEON
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
INFINEON
22+
P-TO220-3-1
36992
原裝現(xiàn)貨庫存.價格優(yōu)勢
 詢價
INFINEON
23+
TO-220
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
INFINEON
23+
TO-220
5000
專做原裝正品,假一罰百!
 詢價
更多SPP11N65C3供應商 更新時間2025-1-12 14:03:00

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