首頁(yè) >SPD03N60S5>規(guī)格書列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
SPD03N60S5 | Cool MOS??Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
SPD03N60S5 | N-Channel MOSFET Transistor ?DESCRITION ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤1.4? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
CoolMOS??PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Ultraloweffectivecapacitance ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤1.4? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perf | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-251(IPAK)packaging ?Highspeedswitching ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Powersupply ?DC-DCconverters ?Motorcontrol ?Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
詳細(xì)參數(shù)
- 型號(hào):
SPD03N60S5
- 功能描述:
MOSFET COOL MOS N-CH 600V 3.2A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
24+ |
SOT-252 |
17181 |
原裝進(jìn)口假一罰十 |
詢價(jià) | ||
INFINEON |
23+ |
TO252 |
6996 |
只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
INFINEON/英飛凌 |
24+ |
5000 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | |||
Infineon(英飛凌) |
23+ |
TO-252 |
9555 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。 |
詢價(jià) | ||
24+ |
3500 |
詢價(jià) | |||||
進(jìn)口原裝 |
23+ |
SMD |
24366 |
全新原裝現(xiàn)貨,專業(yè)代理熱賣 |
詢價(jià) | ||
INFINEON |
24+ |
TO-282 |
4897 |
絕對(duì)原裝!現(xiàn)貨熱賣! |
詢價(jià) | ||
INFINEON |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
INFINEON |
22+ |
TO-252 |
28768 |
原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
INFINE0N |
23+ |
TO-252 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) |
相關(guān)規(guī)格書
更多- SPD03N60S5BTMA1
- SPD040/120-10-F-1/15A
- SPD040/250-10-F-1/15A
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- SPD04N60C2
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相關(guān)庫(kù)存
更多- SPD03N60S5XT
- SPD040/120-10-F-1/30A
- SPD040/250-10-F-1/30A
- SPD04N50C3_08
- SPD04N60C3
- SPD04N60C3BTMA1
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- SPD07N60C3NT
- SPD07N60C3ZT
- SPD07N60S5NT
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- SPD0801SMS
- SPD0802_1
- SPD08-020-RB-TR
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- SPD08-050-L-RB-TR
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