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SM5852AS

Digital Signal Processor

DigitalSignalProcessor

NPC

Nippon Precision Circuits Inc

5852

IntroductiontoKnowlesPrecisionDevices

Applications RFamplifier LCFiltersandNetworks BroadbandWirelessLAN MedicalDevices CordlessandCellularphones DR/CrystalOscillator Microstriplinefilters

KNOWLES

Knowles

5852

CustomerSpecification

Construction 1)Component11X1HOOKUP a)Conductor28(7/36)AWGSilverPlatedCopper0.015 b)Insulation0.010Wall,Nom.PTFE0.035+/-0.004 (1)Color(s) WHITE,BLACK,RED,GREEN,YELLOW,BLUE,BROWN ORANGE,GRAY,VIOLET,WHITE/BLACK,WHITE/BLUE WHITE/ORANGE,WHITE/VIOLET

ALPHAWIREAlpha Wire

阿爾法電線

5852

CustomerSpecification

ALPHAWIREAlpha Wire

阿爾法電線

CPH5852

MOSFET:P-ChannelSiliconMOSFETSBD:SchottkyBarrierDiode

MOSFET:P-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features ?CompositetypecontainingaP-ChannelMOSFET(MCH3312)andaSchottkyBarrierDiode(SB1003M3),facilitatinghigh-densitymounting. ?[MOS] ?LowON-resistance ?Ultrahigh-speedswitching ?4Vdrive ?[SBD]

SANYOSanyo

三洋三洋電機(jī)株式會(huì)社

IRF5852

PowerMOSFET(Vdss=20V)

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

IRF5852

UltraLowOn-Resistance

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

IRF5852

UltraLowOn-Resistance

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

IRF5852PBF

UltraLowOn-Resistance

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

IRF5852TR

UltraLowOn-Resistance

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

IRF5852TRPBF

UltraLowOn-Resistance

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

ISO5852S

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

ISO5852S

High-CMTI2.5-A/5-AIsolatedIGBT,MOSFETGateDriverwithSplitOutputsandActiveSafetyFeatures

TITexas Instruments

德州儀器美國(guó)德州儀器公司

ISO5852S

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

ISO5852SDW

High-CMTI2.5-A/5-AIsolatedIGBT,MOSFETGateDriverwithSplitOutputsandActiveSafetyFeatures

TITexas Instruments

德州儀器美國(guó)德州儀器公司

ISO5852SDWR

High-CMTI2.5-A/5-AIsolatedIGBT,MOSFETGateDriverwithSplitOutputsandActiveSafetyFeatures

TITexas Instruments

德州儀器美國(guó)德州儀器公司

ISO5852S-EP

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

ISO5852S-EP

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

ISO5852SMDWREP

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

ISO5852SMDWREP

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

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SMD16
1
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SMI
2023+
80000
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SMI
21+
35200
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NPC
23+
SO-16-5.2
7000
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!
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NPC
2016+
SOP-16
6523
房間原裝進(jìn)口現(xiàn)貨假一賠十
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NPC
22+
SOP
7500
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UPC
10+
SOP-16
7800
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2021+
SOP16
100500
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SOP
68500
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NPC
23+
SOP16
8560
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更多SM5852AS供應(yīng)商 更新時(shí)間2024-10-24 16:00:00