SIHG33N60EF中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

FEATURES

? Fast body diode MOSFET using E series

technology

? Reduced trr, Qrr, and IRRM

? Low figure-of-merit (FOM): Ron x Qg

? Low input capacitance (Ciss)

? Reduced switching and conduction losses

? Ultra low gate charge (Qg)

? Avalanche energy rated (UIS)

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

? Telecommunications

- Server and telecom power supplies

? Lighting

- High-intensity discharge (HID)

- Light emitting diodes (LEDs)

? Consumer and computing

- ATX power supplies

? Industrial

- Welding

- Battery chargers

? Renewable energy

- Solar (PV inverters)

? Switch mode power suppliers (SMPS)

? Applications using the following topologies

- LLC

- Phase shifted bridge (ZVS)

- 3-level inverter

- AC/DC bridge