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首頁(yè)>SI7403BDN-T1-E3>芯片詳情
SI7403BDN-T1-E3_VISHAY/威世科技_MOSFET 20V 8.0A 9.6W京北通宇電子
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號(hào):
SI7403BDN-T1-E3
- 功能描述:
MOSFET 20V 8.0A 9.6W
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商
- 企業(yè):
北京京北通宇電子元件有限公司
- 商鋪:
- 聯(lián)系人:
洪先生
- 手機(jī):
17862669251
- 詢價(jià):
- 電話:
17862669251
- 地址:
北京市海淀區(qū)安寧莊西路9號(hào)院29號(hào)樓金泰富地大廈505
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