首頁 >SGS10N60RUF>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
SGS10N60RUF | Short Circuit Rated IGBT GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswher | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | |
Short Circuit Rated IGBT GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswh | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
包裝：管件 封裝/外殼：TO-220-3 整包 類別：分立半導體產品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 16A TO220F | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
包裝：管件 封裝/外殼：TO-220-3 整包 類別：分立半導體產品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 16A 55W TO220F | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
FastIGBTinNPT-technology FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HighSpeed2-Technology ?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technology FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
ShortCircuitRatedIGBT | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
ShortCircuitRatedIGBT | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
N-CHANNELPOWERMOSFET | SISEMICShenzhen SI Semiconductors Co.,LTD. 深愛半導體深圳深愛半導體股份有限公司 | SISEMIC | ||
Reducedswitchingandconductionlosses | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
FastS-IGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ·75lowerEoffcomparedtopreviousgenerationcombinedwith lowconductionlosses ·Shortcircuitwithstandtime–10ms ·Designedfor: -Motorcontrols -Inverter ·NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebe | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HighSpeed2-Technology ?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode ●75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ●Shortcircuitwithstandtime–10μs ●Designedfor: ??-Motorcontrols ??-Inverter ●NPT-Technologyfor600Va | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastS-IGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ·75lowerEoffcomparedtopreviousgenerationcombinedwith lowconductionlosses ·Shortcircuitwithstandtime–10ms ·Designedfor: -Motorcontrols -Inverter ·NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebe | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode ●75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ●Shortcircuitwithstandtime–10μs ●Designedfor: ??-Motorcontrols ??-Inverter ●NPT-Technologyfor600Va | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastS-IGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ·75lowerEoffcomparedtopreviousgenerationcombinedwith lowconductionlosses ·Shortcircuitwithstandtime–10ms ·Designedfor: -Motorcontrols -Inverter ·NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebe | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細參數
- 型號：
SGS10N60RUF
- 制造商：
FAIRCHILD
- 制造商全稱：
Fairchild Semiconductor
- 功能描述：
Short Circuit Rated IGBT
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FAIRCHIL |
24+ |
TO-220F |
8866 |
詢價 | |||
FAIRCHILD |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
FAIRC |
24+ |
TO-220F |
16800 |
絕對原裝進口現貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
TO-220 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
TO-220F |
10000 |
公司只做原裝正品 |
詢價 | ||
FAIRCHILD/仙童 |
22+ |
TO-220F |
6000 |
十年配單,只做原裝 |
詢價 | ||
FAIRCHILD/仙童 |
22+ |
TO-220F |
25000 |
只做原裝進口現貨,專注配單 |
詢價 | ||
FAIRCHILD/仙童 |
22+ |
TO-220F |
25000 |
只做原裝進口現貨,專注配單 |
詢價 | ||
仙童 |
17+ |
NA |
6200 |
100%原裝正品現貨 |
詢價 | ||
原廠 |
23+ |
TO-220F |
5000 |
原裝正品,假一罰十 |
詢價 |
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