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SGW20N60

ShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGW20N60

FastS-IGBTinNPT-technology

FastS-IGBTinNPT-technology ?75lowerEoffcomparedtopreviousgenerationcombinedwith lowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistributio

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW20N60

FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW20N60HS

HighSpeedIGBTinNPT-technology

HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: ??-parallelswitchingcapability ??-moderateEoffincreasewithtemperature ??-

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW20N60HS

HighSpeedIGBTinNPT-technology30lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW20N60RUF

ShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SKW20N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastS-IGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicatio

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKW20N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKW20N60HS

HighSpeedIGBTinNPT-technology

HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKW20N60HS

HighSpeedIGBTinNPT-technology30lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA20N60CFD

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA20N60CFD

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplication

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA20N60CFD

CoolMOSPowerTransistor

Features ?Newrevolutionaryhighvoltagetechnology ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Periodicavalancherated ?Qualifiedforindustrialgradeapplicationsaccording

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA20N60CFD

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnologyExtremedv/dtrated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI20N60CFD

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Intrinsicfast-recoverybodydiode ?Extremelowreverserecoverycharge ?Pb-freeleadplating;

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI20N60CFD

iscN-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.22? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP20N60CFD

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.22? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP20N60CFD

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP20N60CFD

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP20N60CFD

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Intrinsicfast-recoverybodydiode ?Extremelowreverserecoverycharge ?Pb-freeleadplating;

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號：

    SGP20N60RUFTU

  • 功能描述：

    IGBT 晶體管

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
23+
TO-220
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
INFINEON
23+
8000
只做原裝現(xiàn)貨
 詢價
Infineon
1708+
?
7500
只做原裝進(jìn)口,假一罰十
 詢價
INFINEON
1503+
TO220-3
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
Infineon
22+
NA
2118
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
Infineon Technologies
22+
TO2203
9000
原廠渠道,現(xiàn)貨配單
 詢價
Infineon Technologies
24+
原裝
5000
原裝正品,提供BOM配單服務(wù)
 詢價
Infineon Technologies
2022+
PG-TO220-3
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
INFINEON
2405+
原廠封裝
12500
15年芯片行業(yè)經(jīng)驗/只供原裝正品:0755-83267371鄒小姐
 詢價
Infineon Technologies
24+
TO-220-3
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
更多SGP20N60RUFTU供應(yīng)商 更新時間2025-1-8 15:21:00

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