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SGP10N60RUFDTU

包裝：管件 封裝/外殼：TO-220-3 類別：分立半導體產品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 16A TO220-3

ONSEMION Semiconductor

安森美半導體安森美半導體公司

SGS10N60

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswher

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SGS10N60

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswh

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SGS10N60RUF

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswher

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SGS10N60RUFD

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswh

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SGW10N60

FastIGBTinNPT-technology

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW10N60

HighSpeed2-Technology

?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW10N60A

FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW10N60A

FastIGBTinNPT-technology

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW10N60RUF

ShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SGW10N60RUFD

ShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SIF10N60C

N-CHANNELPOWERMOSFET

SISEMICShenzhen SI Semiconductors Co.,LTD.

深愛半導體深圳深愛半導體股份有限公司

SIHJ10N60E

Reducedswitchingandconductionlosses

VishayVishay Siliconix

威世科技威世科技半導體

SKB10N60

FastS-IGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

·75lowerEoffcomparedtopreviousgenerationcombinedwith lowconductionlosses ·Shortcircuitwithstandtime–10ms ·Designedfor: -Motorcontrols -Inverter ·NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebe

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKB10N60

HighSpeed2-Technology

?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKB10N60A

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKB10N60A

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode ●75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ●Shortcircuitwithstandtime–10μs ●Designedfor: ??-Motorcontrols ??-Inverter ●NPT-Technologyfor600Va

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKP10N60

FastS-IGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

·75lowerEoffcomparedtopreviousgenerationcombinedwith lowconductionlosses ·Shortcircuitwithstandtime–10ms ·Designedfor: -Motorcontrols -Inverter ·NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebe

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKP10N60A

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKP10N60A

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode ●75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ●Shortcircuitwithstandtime–10μs ●Designedfor: ??-Motorcontrols ??-Inverter ●NPT-Technologyfor600Va

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

產品屬性

  • 產品編號：

    SGP10N60RUFDTU

  • 制造商：

    onsemi

  • 類別：

    分立半導體產品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    管件

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    2.8V @ 15V，10A

  • 開關能量：

    141μJ（開），215μJ（關）

  • 輸入類型：

    標準

  • 25°C 時 Td（開/關）值：

    15ns/36ns

  • 測試條件：

    300V，10A，20 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3

  • 供應商器件封裝：

    TO-220-3

  • 描述：

    IGBT 600V 16A TO220-3

供應商型號品牌批號封裝庫存備注價格
onsemi(安森美)
23+
TO-220
1612
原廠訂貨渠道,支持BOM配單一站式服務
 詢價
FAIRCHILD/仙童
24+
TO-220-3
3580
原裝現貨/15年行業(yè)經驗歡迎詢價
 詢價
ON
23+
NA
6800
只做原裝正品現貨
 詢價
onsemi/安森美
22+
原裝封裝
10000
品質保證,信譽至上
 詢價
ON/安森美
2410+
TO-220
12000
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
 詢價
ON/安森美
19+
TO-220
177
正規(guī)渠道原裝正品
 詢價
24+
3000
自己現貨
 詢價
SMG
05+
原廠原裝
4090
只做全新原裝真實現貨供應
 詢價
FAIRCHILD
22+23+
TO220
37309
絕對原裝正品全新進口深圳現貨
 詢價
FSC原裝
24+
TO-220
9860
一級代理
 詢價
更多SGP10N60RUFDTU供應商 更新時間2025-1-13 10:19:00

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