首頁 >SGNMNC3205K>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SGNMNC3205K | 包裝:散裝 類別:電容器 微調(diào)器,可變電容器 描述:CAP TRIM 3-20PF 4500V CHAS MNT | Sprague-Goodman Sprague Goodman | Sprague-Goodman | |
LowCapacitanceESDProtection Description TheSP3205provideslowcapacitance,unidirectionalandahigh levelofprotectionforelectronicequipmentthatmayexperience destructiveelectrostaticdischarges(ESD).Thetypicalcapacitance of0.3pFhelpsensureexcellentsignalintegrityonthemost challengingconsumerele | Littelfuselittelfuse 力特力特公司 | Littelfuse | ||
DynamicSpeaker | SOBERTON Soberton Inc. | SOBERTON | ||
SPDTSwitch FeaturesandApplications ?Controlvoltage+3/0V. ?CPpackage. | SANYOSanyo 三洋三洋電機(jī)株式會社 | SANYO | ||
110A,55VN-CHANNELMOSFET DESCRIPTION SVD3205T/F/SisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryflat low-voltagestructureVDMOStechnology.Theimprovedprocessand cellstructurehavebeenespeciallytailoredtominimizeon-state resistance,providesup | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
110A,55VN-CHANNELMOSFET DESCRIPTION SVD3205T/F/SisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryflat low-voltagestructureVDMOStechnology.Theimprovedprocessand cellstructurehavebeenespeciallytailoredtominimizeon-state resistance,providesup | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
110A,55VN-CHANNELMOSFET DESCRIPTION SVD3205T/F/SisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryflat low-voltagestructureVDMOStechnology.Theimprovedprocessand cellstructurehavebeenespeciallytailoredtominimizeon-state resistance,providesup | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
110A,55VN-CHANNELMOSFET DESCRIPTION SVD3205T/F/SisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryflat low-voltagestructureVDMOStechnology.Theimprovedprocessand cellstructurehavebeenespeciallytailoredtominimizeon-state resistance,providesup | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
SVI3205B/StereoPowerAmplifier | SANYOSanyo 三洋三洋電機(jī)株式會社 | SANYO | ||
SVI3205B/StereoPowerAmplifier | PanasonicPanasonic Corporation 松下松下電器 | Panasonic | ||
SVI3205B/StereoPowerAmplifier | SANYOSanyo 三洋三洋電機(jī)株式會社 | SANYO | ||
SVI3205B/StereoPowerAmplifier | PanasonicPanasonic Corporation 松下松下電器 | Panasonic | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-channelMOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingSAMWINsemiconductor’sadvancedplanarstripe,DMOStechnologyintendedforbatteryOperatedsystemslikeaDC-DCconvertermotorcontrol,ups,audioamplifier.Also,especiallydesignedtominimizeRDS(ON) | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
SingleWindowSingleModeWidebandFiberCoupler | OPLINK OPLINK Communications Inc. | OPLINK | ||
N-channelMOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingSAMWINsemiconductor’sadvancedplanarstripe,DMOStechnologyintendedforbatteryOperatedsystemslikeaDC-DCconvertermotorcontrol,ups,audioamplifier.Also,especiallydesignedtominimizeRDS(ON) | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
AEC-Q101Qualified650VGaNFETinTO-247 | TRANSPHORM Transphorm | TRANSPHORM | ||
CrystalUnitSMD1.6x1.224.576MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount1.6mmx1.2mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
5A,22VBidirectionalLoadSwitchwithFastRoleSwap Description TheUCS3205is5A,22VloadswitchwithFastRole Swap(FRS)capability,bidirectionalcurrentcapability, configurableovercurrentlimiting,auto-recoveryFault handling,overvoltagelockout,back-voltageprotection, slewratecontrol,quickoutputdischargeandascaled analog | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip |
產(chǎn)品屬性
- 產(chǎn)品編號:
SGNMNC3205K
- 制造商:
Sprague-Goodman
- 類別:
電容器 > 微調(diào)器,可變電容器
- 系列:
SGNM-Series 3
- 包裝:
散裝
- 電容范圍:
3 ~ 20pF
- 介電材料:
陶瓷
- 不同頻率時 Q 值:
600 @ 25MHz
- 大小 / 尺寸:
0.710" 直徑(18.03mm)
- 工作溫度:
-55°C ~ 125°C
- 安裝類型:
底座安裝
- 特性:
非磁性,密封式
- 描述:
CAP TRIM 3-20PF 4500V CHAS MNT
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
SPRAGUE |
20+ |
電容器 |
12 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價 | ||
24+ |
N/A |
62000 |
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇 |
詢價 | |||
Sprague-Goodman |
24+ |
可調(diào)電容 |
600 |
只做原裝正品,假壹罰拾! |
詢價 |
相關(guān)規(guī)格書
更多- SGP.1575.12.4.A.02
- SGP.1575.18.4.C.02
- SGP011BSL
- SGP0120SD
- SGP0120SL
- SGP0120SL1_15
- SGP0140SD
- SGP0140SL
- SGP0140SL1
- SGP0160SL
- SGP0230SD_15
- SGP0260SD
- SGP02G72A1BQ1SA-DCRT
- SGP02N120
- SGP02N120_07
- SGP02N60
- SGP04G72A1BD1SA-DCRT
- SGP04N60
- SGP06N60
- SGP06N60_07
- SGP08G72D1BD2SA-BBRT
- SGP100
- SGP10N60
- SGP10N60A
- SGP10N60RUF
- SGP12A
- SGP13N60UF
- SGP13N60UFTU
- SGP1575154A02
- SGP1575254C02
- SGP15N120
- SGP15N120
- SGP15N60
- SGP15N60
- SGP15N60RUF
- SGP1A
- SGP1A_15
- SGP1R_15
- SGP20N60
- SGP20N60
- SGP20N60HS
- SGP20N60HS_09
- SGP23N60UF
- SGP23N60UFTU
- SGP25D
相關(guān)庫存
更多- SGP.1575.15.4.A.02
- SGP.1575.25.4.C.02
- SGP011BSL_15
- SGP0120SD_15
- SGP0120SL1
- SGP0130SL1
- SGP0140SD_15
- SGP0140SL_15
- SGP0160SD
- SGP0230SD
- SGP0240SD
- SGP0260SD_15
- SGP02N120
- SGP02N120
- SGP02N60
- SGP02N60_07
- SGP04N60
- SGP04N60_07
- SGP06N60
- SGP07N120
- SGP08G72D1BD2SA-CCRT
- SGP100SZ
- SGP10N60A
- SGP10N60A_09
- SGP10N60RUFD
- SGP13N60UF
- SGP13N60UFD
- SGP1575124A02
- SGP1575184C02
- SGP15A
- SGP15N120
- SGP15N120_09
- SGP15N60
- SGP15N60_08
- SGP18C
- SGP1A
- SGP1R
- SGP20N60
- SGP20N60
- SGP20N60_09
- SGP20N60HS
- SGP20N60RUF
- SGP23N60UFD
- SGP25C
- SGP2A