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AUIRF9Z34N

AdvancedPlanarTechnology

Features ?AdvancedPlanarTechnology ?P-ChannelMOSFET ?DynamicdV/dTRating ?175°COperatingTemperature ?FastSwitching ?FullyAvalancheRated ?RepetitiveAvalancheAlloweduptoTjmax ?Lead-Free,RoHSCompliant ?AutomotiveQualified*

KERSEMI

Kersemi Electronic Co., Ltd.

AUIRF9Z34N

AUTOMOTIVEGRADEAdvancedPlanarTechnology

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

IRF

International Rectifier

F9Z34NS

AdvancedProcessTechnology

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRF

International Rectifier

GEF9Z34N

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

IIRF9Z34N

P-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF9Z34

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF9Z34

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRatedP-Channel

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9Z34

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導體

IRF9Z34

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-18A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.14Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF9Z34L

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導體

IRF9Z34L

PowerMOSFET(Vdss=-60V,Rds(on)=0.14ohm,Id=-18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF9Z34LPBF

SurfaceMount

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF9Z34LPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導體

IRF9Z34N

PowerMOSFET(Vdss=-55V,Rds(on)=0.10ohm,Id=-19A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF9Z34N

AdvancedPlanarTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9Z34N

P-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF9Z34NL

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF9Z34NL

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9Z34NL

PowerMOSFET(Vdss=-55V,Rds(on)=0.10ohm,Id=-19A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF9Z34NLPBF

AdvancedProcessTechnology

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    SFW9Z34TM

  • 功能描述：

    MOSFET P-CH/60V/18A/0.14OHM

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
onsemi(安森美)
23+
TO-263
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
原廠
23+
TO-263
5000
原裝正品,假一罰十
 詢價
FAI
2018+
TO263
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
 詢價
FAIRCHILD
18+
TO-263
85600
保證進口原裝可開17%增值稅發(fā)票
 詢價
FSC/ON
23+
原包裝原封 □□
115728
原裝進口特價供應 QQ 1304306553 更多詳細咨詢 庫存
 詢價
FAIRCHI
2020+
TO-263
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
FAIRCHILD/仙童
2022+
800
全新原裝 貨期兩周
 詢價
FAIRCHILD/仙童
24+
263
12000
原裝正品現(xiàn)貨
 詢價
FAIRCHILD仙童
23+
D2PAK
10000
公司只做原裝正品
 詢價
FAIRCHILD/仙童
23+
SOT-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多SFW9Z34TM供應商 更新時間2025-1-4 15:14:00

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