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SFWI9Z34

Advanced Power MOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

AUIRF9Z34N

AdvancedPlanarTechnology

Features ?AdvancedPlanarTechnology ?P-ChannelMOSFET ?DynamicdV/dTRating ?175°COperatingTemperature ?FastSwitching ?FullyAvalancheRated ?RepetitiveAvalancheAlloweduptoTjmax ?Lead-Free,RoHSCompliant ?AutomotiveQualified*

KERSEMI

Kersemi Electronic Co., Ltd.

AUIRF9Z34N

AUTOMOTIVEGRADEAdvancedPlanarTechnology

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

IRF

International Rectifier

F9Z34NS

AdvancedProcessTechnology

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IRF

International Rectifier

GEF9Z34N

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

IIRF9Z34N

P-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9Z34

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9Z34

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRatedP-Channel

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9Z34

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-18A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.14Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9Z34L

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34L

PowerMOSFET(Vdss=-60V,Rds(on)=0.14ohm,Id=-18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF9Z34LPBF

SurfaceMount

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF9Z34LPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34N

PowerMOSFET(Vdss=-55V,Rds(on)=0.10ohm,Id=-19A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF9Z34N

AdvancedPlanarTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9Z34N

P-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9Z34NL

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9Z34NL

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9Z34NL

PowerMOSFET(Vdss=-55V,Rds(on)=0.10ohm,Id=-19A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    SFWI9Z34

  • 制造商：

    FAIRCHILD

  • 制造商全稱：

    Fairchild Semiconductor

  • 功能描述：

    Advanced Power MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
EPCOS
21+
BGA
10000
原裝現(xiàn)貨假一罰十
 詢價
SAMSUNG
2016+
SMD
5083
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
WISOL
SMD
10265
提供BOM表配單只做原裝貨值得信賴
 詢價
WISOL
22+23+
SMD
39117
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
23+
17ROHS
81147
原裝正品--可開增值稅發(fā)票量大可訂貨
 詢價
WISOL
13+
SMD
4500
向鴻原裝正品/代理渠道/現(xiàn)貨優(yōu)勢
 詢價
原裝
20+
原裝
56200
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
WIOSL
24+
QFN
130
原裝現(xiàn)貨100%現(xiàn)貨
 詢價
原裝正品
24+
NA
66300
一級代理/全新原裝現(xiàn)貨/長期供應(yīng)!
 詢價
更多SFWI9Z34供應(yīng)商 更新時間2025-1-3 15:32:00

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