零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
20A,650VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC20N65isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
20A650VN-channelenhancementmodefieldeffecttransistor | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風微電子廣東佑風微電子有限公司 | YFWDIODE | ||
20Amps,650VoltsN-CHANNELMOSFET | CHONGQINGChongqing Pingwei Enterprise co.,Ltd 重慶平偉實業(yè)重慶平偉實業(yè)股份有限公司 | CHONGQING | ||
MOSFET650V,20AN-CHANNEL FEATURE ?ProprietaryNewPlanarTechnology ?RDS(ON),typ.typ.=0.38?@VGS=10V ?LowGateChargeMinimizeSwitchingLoss ?FastRecoveryBodyDiode DESCRIPTION TheAM20N65isavailableinTO220andTO220F Packages. APPLICATIONS ?Adaptor ?TVMainPower ?SMPSPowerSupply ?LCDPanel | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. Fastreverserecoverytime. Drivecircuitscanbesimple. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,19A,RDS(ON)=180mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,19A,RDS(ON)=180mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. Fastreverserecoverytime. Drivecircuitscanbesimple. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. Fastreverserecoverytime. Drivecircuitscanbesimple. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 700V@TJmax,20A,RDS(ON)=0.18W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-247package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
LowIntrinsicCapacitances | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半導體深圳市福斯特半導體有限公司 | FOSTER | ||
N-ChannelPowerMOSFET | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半導體深圳市福斯特半導體有限公司 | FOSTER | ||
thesiliconN-channelEnhancedVDMOSFETs | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導體深圳市華之美半導體有限公司 | HMSEMI | ||
HighEfficiencyforMotorControl. | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導體深圳市華之美半導體有限公司 | HMSEMI |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
RUICHIPS/銳駿 |
23+ |
TO-220 |
86592 |
RU代理全新原廠原裝 |
詢價 | ||
銳駿品牌 |
1948+ |
DFN3333 |
18562 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
RUICHIPS |
24+ |
DFN3333 |
60000 |
原裝現(xiàn)貨 |
詢價 | ||
RUICHIPS |
22+ |
DFN3X3-8 |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單! |
詢價 | ||
RUICHIPS |
DFN3333 |
90000 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
RUICHIPS |
PDFN3333 |
22+ |
56000 |
全新原裝進口,假一罰十 |
詢價 | ||
RUICHIPS |
23+ |
DFN3X3-8 |
50000 |
原裝正品 支持實單 |
詢價 | ||
Ruichips(銳駿半導體) |
23+ |
PDFN8(3.3x3.3) |
6000 |
誠信服務(wù),絕對原裝原盤 |
詢價 | ||
RUICHIPS |
2407+ |
PDFN3333 |
30098 |
全新原裝!倉庫現(xiàn)貨,大膽開價! |
詢價 | ||
24+ |
N/A |
69000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 |
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