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RSR020N06TL

N-Channel 60-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

FDP020N06B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=313A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDP020N06B

NewProducts,TipsandToolsforPowerandMobileApplications

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IIPP020N06N

iscN-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤2.0m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPI020N06N

OptiMOSTMPower-Transistor

Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI020N06N

NewOptiMOS??40Vand60V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP020N06N

NewOptiMOS??40Vand60V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP020N06N

OptiMOSTMPower-Transistor

Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP020N06N

iscN-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤2.0m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NTMFD020N06C

MOSFET-Power,DualN-Channel,DUALSO8FL60V,20.3m,27A

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NTMFS020N06C

MOSFET-Power,SingleN-Channel,SO8FL60V,19.6m,28A

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NTTFS020N06C

MOSFET-Power,SingleN-Channel,8FL60V,20.3m,27A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications ?PowerTools,BatteryOperatedVacuum

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NTTFS020N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,20.3m,27A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications ?PowerTools,BatteryOperatedVacuum

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NVMFD020N06C

MOSFET-Power,DualN-Channel,DUALSO8FL60V,20.3m,27A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVMFWD020N06C?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Free,Hal

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NVMFS020N06C

MOSFET-Power,SingleN-Channel,SO-8FL60V,19.6m,28A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVMFWS020N06C?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Free,Hal

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NVTFS020N06C

MOSFET-Power,SingleN-Channel,8FL60V,20.3m,27A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS020N06C?WettableFlankOptionforEnhancedOptical Inspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fr

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NVTFS020N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,20.3m,27A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS020N06C?WettableFlankOptionforEnhancedOptical Inspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fr

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NVTFWS020N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,20.3m,27A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS020N06C?WettableFlankOptionforEnhancedOptical Inspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fr

ONSEMION Semiconductor

安森美半導體安森美半導體公司

PRM020N06D

60VSingleN-ChannelMOSFET

PFC

PFC Device Inc.

PRM020N06E

60VSingleN-ChannelMOSFET

PFC

PFC Device Inc.

詳細參數(shù)

  • 型號：

    RSR020N06TL

  • 功能描述：

    MOSFET N-CH 60V 2A TSMT6

  • RoHS：

    是

  • 類別：

    分離式半導體產(chǎn)品 >> FET - 單

  • 系列：

    -

  • 標準包裝：

    1,000

  • 系列：

    MESH OVERLAY™ FET

  • 型：

    MOSFET N 通道，金屬氧化物 FET

  • 特點：

    邏輯電平門

  • 漏極至源極電壓(Vdss)：

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C：

    18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C：

    180 毫歐 @ 9A，10V Id 時的

  • Vgs(th)（最大）：

    4V @ 250µA 閘電荷(Qg) @

  • Vgs：

    72nC @ 10V 輸入電容(Ciss) @

  • Vds：

    1560pF @ 25V 功率 -

  • 最大：

    40W

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應商設備封裝：

    TO-220FP

  • 包裝：

    管件

供應商型號品牌批號封裝庫存備注價格
ROHM
16+
SOT-23
12000
進口原裝現(xiàn)貨/價格優(yōu)勢!
 詢價
ROHM/羅姆
21+
SOT-23
1840
只做原裝,假一罰十
 詢價
ROHM/羅姆
24+
SOT-23
1740
原廠授權(quán)代理 價格絕對優(yōu)勢
 詢價
ROHM
24+
SOT-23
12500
絕對原裝現(xiàn)貨,價格低,歡迎詢購!
 詢價
ROHM/羅姆
2019+PB
TSMT3
48000
原裝正品 可含稅交易
 詢價
ROHM
22+
24000
華南區(qū)總代
 詢價
ROHM/羅姆
2021+
TSMT3
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
ROHM/羅姆
24+
SOT-23
505348
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
ROHM
18+
NA
3401
進口原裝正品優(yōu)勢供應
 詢價
ROHM
1742+
SOT23-3
98215
只要網(wǎng)上有絕對有貨!只做原裝正品!
 詢價
更多RSR020N06TL供應商 更新時間2025-1-18 8:30:00

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