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IPI020N06N

OptiMOSTM Power-Transistor

Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI020N06N

New OptiMOS??40V and 60V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP020N06N

iscN-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤2.0m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP020N06N

NewOptiMOS??40Vand60V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP020N06N

OptiMOSTMPower-Transistor

Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

NTMFD020N06C

MOSFET-Power,DualN-Channel,DUALSO8FL60V,20.3m,27A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTMFS020N06C

MOSFET-Power,SingleN-Channel,SO8FL60V,19.6m,28A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTTFS020N06C

MOSFET-Power,SingleN-Channel,8FL60V,20.3m,27A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications ?PowerTools,BatteryOperatedVacuum

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTTFS020N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,20.3m,27A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications ?PowerTools,BatteryOperatedVacuum

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVMFD020N06C

MOSFET-Power,DualN-Channel,DUALSO8FL60V,20.3m,27A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVMFWD020N06C?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Free,Hal

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVMFS020N06C

MOSFET-Power,SingleN-Channel,SO-8FL60V,19.6m,28A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVMFWS020N06C?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Free,Hal

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVTFS020N06C

MOSFET-Power,SingleN-Channel,8FL60V,20.3m,27A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS020N06C?WettableFlankOptionforEnhancedOptical Inspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVTFS020N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,20.3m,27A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS020N06C?WettableFlankOptionforEnhancedOptical Inspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVTFWS020N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,20.3m,27A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS020N06C?WettableFlankOptionforEnhancedOptical Inspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

PRM020N06D

60VSingleN-ChannelMOSFET

PFC

PFC Device Inc.

PRM020N06E

60VSingleN-ChannelMOSFET

PFC

PFC Device Inc.

RHP020N06

4VDriveNchMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團

RHP020N06

4VDriveNchMOSFET

Features 1)LowOn-resistance. 2)Highspeedswitching. 3)WideSOA. Applications Switching

ROHMRohm

羅姆羅姆半導(dǎo)體集團

RHP020N06

4VDriveNchMOSFET

Features 1)LowOn-resistance. 2)Highspeedswitching. 3)WideSOA. Applications Switching

ROHMRohm

羅姆羅姆半導(dǎo)體集團

RHP020N06FRA

4VDriveNchMOSFET

Features 1)LowOn-resistance. 2)Highspeedswitching. 3)WideSOA. Applications Switching

ROHMRohm

羅姆羅姆半導(dǎo)體集團

詳細參數(shù)

  • 型號：

    IPI020N06N

  • 功能描述：

    MOSFET 60V TO-262

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINE0N
23+
TO-262-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
Infineon
1931+
N/A
493
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
Infineon
22+
NA
493
加我QQ或微信咨詢更多詳細信息,
 詢價
INFINEON
23+
PG-TO262-3
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
INFINEON
23+
TO-262
25000
英飛凌MOS管全系列在售,終端可供樣品
 詢價
INFINEON
23+
PG-TO262-3
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
INFINEON
23+
PG-TO262-3
7000
詢價
INFINEON
23+
TO-262
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
 詢價
INFINEON/英飛凌
2021+
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
INFINEON
1809+
TO262-3
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
更多IPI020N06N供應(yīng)商 更新時間2024-11-15 14:36:00

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