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RMP6N60IP

N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest

RECTRON

Rectron Semiconductor

RMP6N60LD

N-CHANNELENHANCEMENTMODEMOSFET

FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest

RECTRON

Rectron Semiconductor

RMP6N60TI

N-CHANNELENHANCEMENTMODEMOSFET

FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest

RECTRON

Rectron Semiconductor

SGP6N60UF

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedswi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SGP6N60UFD

Ultra-FastIGBT

GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeeds

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SGR6N60UF

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses. TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedsw

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SGS6N60

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedswi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SGS6N60UF

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedswi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SGS6N60UFD

Ultra-FastIGBT

GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature.. Features ?Highspeed

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SGU6N60UF

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedswi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SGW6N60UF

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedswi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SGW6N60UFD

Ultra-FastIGBT

GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeeds

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SiHFIB6N60A

VishaySiliconix

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC APPLICATIONS ?SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半導體

SIHFIB6N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SSF6N60G

AdvancedMOSFETprocesstechnology

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

SSF6N60G

600VN-ChannelMOSFET

Good-Ark

GOOD-ARK Electronics

SSH6N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SSM6N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SSP6N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SSP6N60

N-CHANNELPOWERMOSFETS

FEATURES ?LowerRDS(on) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導體

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HammondManufacturing
7
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Hammond Manufacturing
2022+
3
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Hammond
2020+
N/A
155
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Hammond
22+
NA
155
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FAI
23+
QFP
89630
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RATHEON
24+
QFP-12P
2485
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RAY
23+
QFP
8650
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RAY
2020+
QFP
80000
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2022
QFP
2300
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RAY
QFP
893993
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更多RMP6N60IP供應商 更新時間2024-12-27 16:06:00