RMM2080中文資料ETC數(shù)據(jù)手冊(cè)PDF規(guī)格書
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[Raytheon RF Components]
Description
The Raytheon RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ion-implanted, 0.5-μm gate MESFET devices fabricated on a semi-insulating GaAs substrate. The first two stages are 4-cell distributed amplifiers utilizing dual-gate FETs for improved gain per stage and to facilitate gain control (4x125μm & 4x250μm). The third stage is a 3-cell distributed dual-gate FET amplifier designed for high output power and efficiency (3x500μm). The RMM2080 amplifier is designed for interconnection with microstrip transmission media using fully automatic assembly techniques.
Features
◆ 2-18 GHz Bandwidth
◆ 24 dB Typical Gain
◆ ±2 dB Gain Flatness
◆ 20 dBm Output Power Typical
◆ Three Stages of Distributed Amplification
◆ Gain Control of up to 70 dB range
◆ Dual-Gate Ion-Implanted 0.5 μm FETs
◆ Chip Size: 4.14mm x 3.22mm x 0.1mm
產(chǎn)品屬性
- 型號(hào)：
RMM2080
- 功能描述：
2-18 GHz Wideband Variable-Gain Driver Amplifier
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
RAYTHEON |
23+ |
NA/ |
890 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
CTIS |
2018+ |
QFP |
6000 |
全新原裝正品現(xiàn)貨,假一賠佰 |
詢價(jià) | ||
CTIS |
22+ |
SMD28 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||
RAYTHEON |
97+ |
QFP12 |
1170 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
RAYTHEON |
589220 |
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量 |
詢價(jià) | ||||
RAYTHEON |
00+ |
37 |
公司優(yōu)勢(shì)庫(kù)存 熱賣中! |
詢價(jià) | |||
ON |
SOT223 |
68500 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
BURNDYELECTRONICS |
新 |
95 |
全新原裝 貨期兩周 |
詢價(jià) | |||
RCT |
2023+ |
25 |
詢價(jià) |
