RMLV1616A-U中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

Description

The RMLV1616A-U Series is a family of 16-Mbit asynchronous SRAMs organized 1,048,576-word × 16-bit.

The RMLV1616A-U Series has realized higher soft error immunity compared to typical SRAMs with on-chip ECC,

archived by Renesas’s unique Advanced LPSRAM technologies. Therefore, it is suitable for battery backup systems.

It is offered in 48pin TSOP (I) or 48-ball fine pitch ball grid array.

Features

? Ultra-low standby current consumption:

── ~ 25°C: 0.4μA (typ.) / 3μA (max.)

── ~ 85°C: 4.4μA (typ.) / 8μA (max.)

? High speed access time: 45ns / 55ns (max.)

? Higher soft error immunity (< 0.04 FIT/Mb)*1 compared to typical SRAMs with on-chip ECC

? Single 3V supply: 2.7V to 3.6V

? Organized 1,048,576-word × 16-bit

(48pin TSOP (I) also configurable as 2,097,152-word × 8bit)

? Easy memory expansion by CS1# and CS2

? No clocks, No refresh

? Common data input and output

── Three state output

? Directly TTL compatible

── All inputs and outputs

? Battery backup operation

? Available in Pb-free and RoHS applicable package