首頁 >RF3618>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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36-MbitDDR?IISRAM2-wordBurstArchitecture(2.5CycleReadlatency)withODT Description TheRMQCEA3636DGBAisa1,048,576-wordby36-bitandtheRMQCEA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency) Description TheRMQSAA3636DGBAisa1,048,576-wordby36-bitandtheRMQSAA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)withODT Description TheRMQSDA3636DGBAisa1,048,576-wordby36-bitandtheRMQSDA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQSGA3636DGBAisa1,048,576-wordby36-bitandtheRMQSGA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)withODT Features PowerSupply 1.8Vforcore(VDD),1.4VtoVDDforI/O(VDDQ) Clock Fastclockcycletimeforhighbandwidth Twoinputclocks(Kand/K)forpreciseDDRtimingatclockrisingedgesonly Twooutputechoclocks(CQand/CQ)simplifydatacaptureinhigh-speedsystems | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ADAPTADORDEENCAPSULADOTSOP56ADIP56PINES Descripción EnplasIC&Burn-inSocket,paraencapsulados:TSOP56 | AGELECTRONICA AG Electronica | AGELECTRONICA | ||
Multiplevoltageregulatorwithswitchandignitionbuffers | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
Multiplevoltageregulatorwithswitchandignitionbuffers | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips |
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