首頁 >RMQCHA3618DGBA>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

RMQCHA3618DGBA

36-Mbit DDR? II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCHA3618DGBA

36-Mbit DDR? II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCHA3618DGBA-222#AC0

36-Mbit DDR??II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCHA3618DGBA-222#AC0

36-Mbit DDR??II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCHA3618DGBA-252#AC0

36-Mbit DDR??II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCHA3618DGBA-252#AC0

36-Mbit DDR??II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSAA3618DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)

Description TheRMQSAA3636DGBAisa1,048,576-wordby36-bitandtheRMQSAA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSDA3618DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)withODT

Description TheRMQSDA3636DGBAisa1,048,576-wordby36-bitandtheRMQSDA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSGA3618DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQSGA3636DGBAisa1,048,576-wordby36-bitandtheRMQSGA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSKA3618DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)withODT

Features PowerSupply 1.8Vforcore(VDD),1.4VtoVDDforI/O(VDDQ) Clock Fastclockcycletimeforhighbandwidth Twoinputclocks(Kand/K)forpreciseDDRtimingatclockrisingedgesonly Twooutputechoclocks(CQand/CQ)simplifydatacaptureinhigh-speedsystems 

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS
1923+
NA
6900
只做進口原裝假一罰十品質(zhì)決定一切價格優(yōu)惠
 詢價
RENESAS/瑞薩
21+
BGA
1574
詢價
RENESAS/瑞薩
BGA
145
原裝現(xiàn)貨
 詢價
DBLECTRO
23+
原廠原包
29960
只做進口原裝 終端工廠免費送樣
 詢價
亞成微
23+
TOLL
7500
亞成微全系列在售
 詢價
TOS
24+
SOT-123
9000
詢價
reso
420
公司優(yōu)勢庫存 熱賣中!
 詢價
RESON
23+
6540
只做原裝正品現(xiàn)貨或者訂貨假一賠十!
 詢價
更多RMQCHA3618DGBA供應(yīng)商 更新時間2025-2-19 14:30:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多