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RMQCEA3618DGBA

36-MbitDDR?IISRAM2-wordBurstArchitecture(2.5CycleReadlatency)withODT

Description TheRMQCEA3636DGBAisa1,048,576-wordby36-bitandtheRMQCEA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCHA3618DGBA

36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCHA3618DGBA

36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSAA3618DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)

Description TheRMQSAA3636DGBAisa1,048,576-wordby36-bitandtheRMQSAA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSDA3618DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)withODT

Description TheRMQSDA3636DGBAisa1,048,576-wordby36-bitandtheRMQSDA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSGA3618DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQSGA3636DGBAisa1,048,576-wordby36-bitandtheRMQSGA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSKA3618DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)withODT

Features PowerSupply 1.8Vforcore(VDD),1.4VtoVDDforI/O(VDDQ) Clock Fastclockcycletimeforhighbandwidth Twoinputclocks(Kand/K)forpreciseDDRtimingatclockrisingedgesonly Twooutputechoclocks(CQand/CQ)simplifydatacaptureinhigh-speedsystems 

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

TDA3618

Multiplevoltageregulatorwithswitchandignitionbuffers

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

TDA3618

Multiplevoltageregulatorwithswitchandignitionbuffers

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

TDA3618AJR

Multiplevoltageregulatorwithswitchandignitionbuffers

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

供應(yīng)商型號品牌批號封裝庫存備注價格
模塊
23+
QFN
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
B
24+
SOP8
860
詢價
BOURNS
2020+
SOP8
2085
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
進口原裝
23+
SOP-8
1120
優(yōu)勢庫存
 詢價
BBOURNS
24+
SOP8
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
BOURNS/伯恩斯
1822+
SOP8
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
MICROSEMI
專業(yè)模塊
MODULE
8513
模塊原裝主營-可開原型號增稅票
 詢價
BOURNS
2020+
SOIC8
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
MICROSEMI
24+
MODULE
2100
公司大量全新現(xiàn)貨 隨時可以發(fā)貨
 詢價
Microsemi
1942+
N/A
908
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更多R3618MH供應(yīng)商 更新時間2025-1-22 11:10:00

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