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PTF10111

6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor

Description ThePTF10111isa6wattLDMOSFETintendedforlargesignalamplifierapplicationsto1.5GHz.Itoperates@50efficiencyand16dBofgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. ?Performanceat1.5GHz,28Volts

EricssonEricsson Microelectronics

愛立信愛立信公司

PTF10112

60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

Description ThePTF10112isaninternallymatchedcommonsourceN-channelenhancement-modelateralMOSFETintendedforCDMAandTDMAapplicationsfrom1.8to2.0GHz.Itisratedat60wattspoweroutput.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetime

EricssonEricsson Microelectronics

愛立信愛立信公司

PTF10119

12 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor

Description ThePTF10119isaninternallymatched,commonsource,N-channelenhancement-modelateralMOSFETintendedforWCDMAapplicationsfrom2.1to2.2GHz.Itisratedat12wattspoweroutput.Nitridesurfacepassivationandgoldmetallizationensureexcellentdevicereliability. ?

EricssonEricsson Microelectronics

愛立信愛立信公司

PTF10120

120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

Description ThePTF10120isaninternallymatchedcommonsourceN-channelenhancement-modelateralMOSFETintendedforCDMAandTDMAapplicationsfrom1.8to2.0GHz.Itisratedat120wattspoweroutput.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimea

EricssonEricsson Microelectronics

愛立信愛立信公司

PTF10122

50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor

Description ThePTF10122isaninternallymatchedcommonsourceN-channelenhancement-modelateralMOSFETintendedforWCDMAapplicationsfrom2.1to2.2GHz.Itisratedat50wattspoweroutput,with11dBofgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevice

EricssonEricsson Microelectronics

愛立信愛立信公司

PTF10125

135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor

Description ThePTF10125isaninternallymatched,commonsourceN-channelenhancement-modelateralMOSFETintendedforlineardriverandfinalapplicationsfrom1.4to1.6GHz,suchasDAB/DRB.Itisratedat135wattsminimumpoweroutpt.Nitridesurfacepassivationandfullgoldmetallization

EricssonEricsson Microelectronics

愛立信愛立信公司

PTF10133

85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description ThePTF10133isaninternallymatched85wattLDMOSFETintendedforcellular,GSMandD-AMPSapplications.Thisdeviceoperatesat50efficiencywith13.5dBofgain.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. ?INTERNALLYMATCHED ?Performanceat8

EricssonEricsson Microelectronics

愛立信愛立信公司

PTF10134

100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor

Description ThePTF10134isaninternallymatchedGOLDMOSFETintendedforWCDMAapplicationsfrom2.1to2.2GHz.Itisratedat100wattspoweroutputandoperateswith10dBtypicalgain.Nitridesurfacepassivationandgoldmetallizationensureexcellentdevicelifetimeandreliability. ?I

EricssonEricsson Microelectronics

愛立信愛立信公司

PTF10135

5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor

Description ThePTF10135isacommonsourceN-channelenhancement-modelateralMOSFETintendedforlargesignalapplicationsfrom1.0to2.0GHz.Itisratedat5wattsminimumoutputpower.Nitridesurfacepassivationandgoldmetallizationensureexcellentdevicelifetimeandreliability.100

EricssonEricsson Microelectronics

愛立信愛立信公司

PTF10136

6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

Description ThePTF10136isa6–wattGOLDMOSFETintendedforlargesignalamplifierapplicationsfromto1.0GHz.Itoperatesat57efficiencywith19dBtypicalgain.Nitridesurfacepassivationandfullgoldmetallizationensureexcellentdevicelifetimeandreliability. ?Performanceat960

EricssonEricsson Microelectronics

愛立信愛立信公司

詳細(xì)參數(shù)

  • 型號(hào)：

    PTF

  • 制造商：

    MA-COM

  • 制造商全稱：

    M/A-COM Technology Solutions, Inc.

  • 功能描述：

    Miniature Power Relay

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