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PTF080451

LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

Description ThePTF080451isa45W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features ?Broadbandinternalmatching ?TypicalEDGEperformance -A

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PTF080451E

LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

Description ThePTF080451isa45W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features ?Broadbandinternalmatching ?TypicalEDGEperformance -A

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PTF080601

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features ?Broadbandinternalmatching ?TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PTF080601A

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features ?Broadbandinternalmatching ?TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PTF080601E

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features ?Broadbandinternalmatching ?TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PTF080601F

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features ?Broadbandinternalmatching ?TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PTF080901

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description ThePTF080901isa90W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features ?Broadbandinternalmatching ?TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PTF080901E

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description ThePTF080901isa90W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features ?Broadbandinternalmatching ?TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PTF080901F

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description ThePTF080901isa90W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features ?Broadbandinternalmatching ?TypicalEDGEperformance -Averageoutput

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PTF081301E

Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz

Description ThePTF081301EandPTF081301Fare130-watt,internally-matchedGOLDMOSFETsintendedforEDGEandCDMAapplicationsinthe869to960MHzbands.Thermally-enhancedpackagingprovidesthecoolestoperationavailable.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliab

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    PTF

  • 制造商：

    MA-COM

  • 制造商全稱：

    M/A-COM Technology Solutions, Inc.

  • 功能描述：

    Miniature Power Relay

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更多PTF供應(yīng)商 更新時間2025-4-17 16:27:00

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