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PSD461F

SURFACE MOUNT SCHOTTKY BARRIER DIODES

PACELEADERPACELEADER INDUSTRIAL

霈峰霈峰實業(yè)有限公司

PT461

Duble-endTypePhototransistor

■Features 1.Compactdouble-endtypepackage 2.Tapingpackage(2000pcs./reel)(PTxxxT) 3.Visiblelightcut-offtype(PT460F/PT461F/465F) ■Applications 1.Floppydiskdrives 2.VCRs 3.Audioequipment

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司（SMA）

PT461F

Duble-endTypePhototransistor

■Features 1.Compactdouble-endtypepackage 2.Tapingpackage(2000pcs./reel)(PTxxxT) 3.Visiblelightcut-offtype(PT460F/PT461F/465F) ■Applications 1.Floppydiskdrives 2.VCRs 3.Audioequipment

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司（SMA）

RB461F

SCHOTTKYDIODE

FEATURES ●Low-powerrectification ●Forswitchingpowersupply ●UltralowVF.(VF=0.45VTyp.at0.7A) ●IF=0.7Aguaranteeddespitethesize.

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金譽半導(dǎo)體深圳市金譽半導(dǎo)體股份有限公司

RB461F

SchottkyBarrierDiode

ROHMRohm

羅姆羅姆半導(dǎo)體集團

RB461F

Schottkybarrierdiode

Features Highreliability Smallmoldtype SuperlowVF Application Generalrectification Structure Siliconepitaxialplanar

ROHMRohm

羅姆羅姆半導(dǎo)體集團

RB461F

Schottkybarrierdiode

ROHMRohm

羅姆羅姆半導(dǎo)體集團

RB461F

SchottkyBarrierDiode

FEATURES ●Smalltotalcapacitance. ●Powerdissipation.(PD=150mW) APPLICATIONS ●Forgeneralpurposeapplications.

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀微電子股份有限公司

RB461F

SCHOTTKYDIODE

FEATURES Powerdissipation PD:150mW(Tamb=25℃) Collectorcurrent IF:0.7A Reversevoltage VR:20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

RB461F

Schottkybarrierdiode

Features ●Smallsurfacemountingtype.(UMD3) ●UltralowVF.(VF=0.45VTyp.at0.7A) ●IF=0.7Aguaranteeddespitethesize.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

RB461F

Schottkybarrierdiode

ROHMRohm

羅姆羅姆半導(dǎo)體集團

RB461F

SchottkyBarrierDiode

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀微電子股份有限公司

RB461F

SchottkyBarrierDiode

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀微電子股份有限公司

RB461F

700mASchottkyBarrierDiode20Volts

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

RB461F

SchottkyBarrierDiodes

Features ◇Smalltotalcapacitance. ◇Powerdissipation.(PD=150mW) Applications ◇Forgeneralpurposeapplications.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

RB461F

SchottkyBarrierDiode

Features Highreliability Smallmoldtype SuperlowVF Application Generalrectification Structure Siliconepitaxialplanar

ROHMRohm

羅姆羅姆半導(dǎo)體集團

RB461F

SchottkyBarrierDiode

ROHMRohm

羅姆羅姆半導(dǎo)體集團

RB461F

SCHOTTKYBARRIERDIODE

SCHOTTKYBARRIERDIODE FEATURES ●Low-powerrectification ●Forswitchingpowersupply ●UltralowVF ●IF=0.7Aguaranteeddespitethesize

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

RB461F

SURFACEMOUNTSCHOTTKYBARRIERDIODE

LowForwardVoltage FastSwitchingSpeed PNJunctionGuardRingforTransientand ESDProtection ForGeneralPurposeSwitchingApplications PlasticMaterial–ULRecognitionFlammability Classification94V-0

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

RB461FM

SchottkyBarrierDiode

ROHMRohm

羅姆羅姆半導(dǎo)體集團

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更多PSD461F供應(yīng)商 更新時間2024-12-26 15:30:00

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