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MTD8N06E

TMOSPOWERFET8.0AMPERES60VOLTSRDS(on)=0.12OHM

TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP8N06

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

MTP8N06

TMOSPOWERFET8.0AMPERES60VOLTSRDS(on)=0.12OHM

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP8N06E

TMOSPOWERFET8.0AMPERES60VOLTSRDS(on)=0.12OHM

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

PHT8N06

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technolgythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT8N06LT

TrenchMOS?transistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogic levelfield-effectpowertransistorina plasticenvelopesuitableforsurface mounting.Thedevicefeaturesvery lowon-stateresistanceandhas integralzenerdiodesgivingESD protection.Itisintendedforusein DC-DCconvertersand

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PHT8N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgenera

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT8N06T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technolgythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

STD8N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.21? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTED CHARACTERIZATION ■TH

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

詳細參數(shù)

  • 型號：

    PHT8N06TT/R

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 3.5A I(D) | SOT-223

供應商型號品牌批號封裝庫存備注價格
NEXPERIA/安世
23+
SOT-223
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NEXPERIA/安世
24+
SOT-223
60000
詢價
PHILIPS/飛利浦
21+
TO-223
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
24+
N/A
64000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
24+
127
詢價
PH
23+
SOT533
21000
全新原裝
 詢價
NXP
16+
NA
8800
誠信經(jīng)營
 詢價
NXP
23+
TO-251
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
NXP
18+
TO-251
41200
原裝正品,現(xiàn)貨特價
 詢價
NXP
24+
TO-251
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
更多PHT8N06TT/R供應商 更新時間2025-5-18 11:00:00

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