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PHT8N06LT

TrenchMOS transistor Logic level FET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgenera

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT8N06LT

TrenchMOS? transistor Logic level FET

GENERALDESCRIPTION N-channelenhancementmodelogic levelfield-effectpowertransistorina plasticenvelopesuitableforsurface mounting.Thedevicefeaturesvery lowon-stateresistanceandhas integralzenerdiodesgivingESD protection.Itisintendedforusein DC-DCconvertersand

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

MTD8N06E

TMOSPOWERFET8.0AMPERES60VOLTSRDS(on)=0.12OHM

TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP8N06

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

MTP8N06

TMOSPOWERFET8.0AMPERES60VOLTSRDS(on)=0.12OHM

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP8N06E

TMOSPOWERFET8.0AMPERES60VOLTSRDS(on)=0.12OHM

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

PHT8N06

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technolgythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT8N06T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technolgythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

STD8N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.21? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTED CHARACTERIZATION ■TH

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

詳細參數(shù)

  • 型號:

    PHT8N06LT

  • 制造商:

    NXP Semiconductors

  • 功能描述:

    MOSFET N SOT-223

  • 功能描述:

    MOSFET, N, SOT-223

  • 功能描述:

    MOSFET, N, SOT-223; Transistor

  • Polarity:

    N Channel; Continuous Drain Current

  • Id:

    7.5A; Drain Source Voltage

  • Vds:

    55V; On Resistance

  • Rds(on):

    80mohm; Rds(on) Test Voltage

  • Vgs:

    5V; Threshold Voltage Vgs

  • Typ:

    1.5V; Power Dissipation

  • Pd:

    8.3W; ;RoHS

  • Compliant:

    Yes

供應(yīng)商型號品牌批號封裝庫存備注價格
NEXPERIA/安世
2019+
SOT-223
78550
原廠渠道 可含稅出貨
詢價
PHILIPS/飛利浦
24+
SOT-223
3000
只做原廠渠道 可追溯貨源
詢價
PHNXP
17+
SOT223
31518
原裝正品 可含稅交易
詢價
NEXPERIA/安世
23+
SOT-223
100586
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
詢價
NEXPERIA/安世
24+
SOT-223
503335
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價
NEXPERIA/安世
23+
SOT-223
1000
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價格低
詢價
NXP恩智浦/PHILIPS飛利浦
24+
SOT-223
9893
新進庫存/原裝
詢價
原廠正品
23+
SOT-223
5000
原裝正品,假一罰十
詢價
NXP
2016+
SOT223
3965
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價
PH
23+
SOT223
21000
全新原裝
詢價
更多PHT8N06LT供應(yīng)商 更新時間2025-1-14 10:20:00