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PHT11N06LT

TrenchMOS transistor Logic level FET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgeneral

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

11N06

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

11N06LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

11N06LTA

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB11N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

PHB11N06LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB11N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHD11N06LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHD11N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHD11N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

PHP11N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

PHP11N06LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT11N06

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgeneral

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT11N06

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT11N06T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PJD11N06A

60VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@6A

PANJITPan Jit International Inc.

強茂股份有限公司

PJD11N06A-AU

60VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@6A

PANJITPan Jit International Inc.

強茂股份有限公司

詳細參數

  • 型號:

    PHT11N06LT

  • 功能描述:

    MOSFET TAPE13 PWRMOS

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
NEXPERIA/安世
2019+
SOT-223
78550
原廠渠道 可含稅出貨
詢價
NXP/恩智浦
2022+
SOT223
15680
原盒原標,正品現(xiàn)貨 誠信經營 終生質保
詢價
PHILIPS/飛利浦
24+
4000
只做原廠渠道 可追溯貨源
詢價
NEXPERIA/安世
20+
SOT-223
120000
原裝正品 可含稅交易
詢價
NXP
23+
TO223
15000
原裝進口、正品保障、合作持久
詢價
NEXPERIA/安世
24+
SOT-223
503326
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價
NXP
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網
詢價
PH
24+
TO-223-3
8866
詢價
PHILIPS
12+
SOT223
15000
全新原裝,絕對正品,公司現(xiàn)貨供應。
詢價
PH
23+
SOT223
21000
全新原裝
詢價
更多PHT11N06LT供應商 更新時間2025-1-18 16:04:00