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PINA350CDSIDSGR

INA350CostandSizeOptimized,LowPower,1.8-Vto5.5-VSelectableGainInstrumentationAmplifier

1Features ?Idealforsize,cost,andpowerconsciousdesigns ?Selectablegainoptions –G=10orG=20(INA350ABS) –G=30orG=50(INA350CDS) ?Spacesavingultra-smallpackageoptions –10-pinX2QFN(RUG)–3mm2 –8-pinWSON(DSG)–4mm2 –8-pinSOT23-THN(DDF)–4.64mm2 ?Op

TITexas Instruments

德州儀器美國德州儀器公司

PLED350S

PLEDUltraLowHoldingCurrentSeries

Description ThisPLEDultra-lowholdingcurrentseriesexhibitsa lowholdingcurrentparameterthatmakesitcompatible withLEDlightingstrings.Theseriesprovideaswitching electroniccharacteristicsforanfluorescenttube replacementbyanLEDstring.Ithelpstomakethe Fluorescent

Littelfuselittelfuse

力特力特公司

PMXB350UPE

20V,P-channelTrenchMOSFET

Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits ?TrenchMOSFETtechnology ?LeadlessultrasmallandultrathinSMDpl

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PMXB350UPE

20V,P-channelTrenchMOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits ?TrenchMOSFETtechnology ?Leadlessultrasmallandultrathi

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PMZ350UPE

20V,P-channelTrenchMOSFET

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PMZ350XN

N-channelTrenchMOSstandardlevelFET

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PMZ350XN

N-channelTrenchMOSstandardlevelFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusing TrenchMOStechnology. 1.2Features 1.3Applications nProfile55lowerthanSOT23nFootprint90smallerthanSOT23 nLowon-stateresistancenLowthresholdvoltage nLeadlesspack

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PMZB350UPE

20V,singleP-channelTrenchMOSFET

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PMZB350UPE

20V,singleP-channelTrenchMOSFET

1.1Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 1.2Featuresandbenefits ?Lowthresholdvoltage ?Veryfastswitching ?TrenchMOSFE

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PSAK350

AC/DCSwitchingPowerSupplies

WALL

Wall Industries Inc

供應(yīng)商型號品牌批號封裝庫存備注價格
NXP
1735+
TO669
6528
科恒偉業(yè)!只做原裝正品!假一賠十!
 詢價
NXP/恩智浦
23+
SOT669
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NXP/恩智浦
12+
SOT669
200
詢價
NXP/恩智浦
2022+
SOT669
200
原廠原裝,假一罰十
 詢價
NXP/恩智浦
23+
SOT669
89630
當天發(fā)貨全新原裝現(xiàn)貨
 詢價
NXP/恩智浦
23+
NA/
7500
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
NXP/恩智浦
22+
SOT669
20000
原裝現(xiàn)貨,實單支持
 詢價
ADI
23+
SOT669
8000
只做原裝現(xiàn)貨
 詢價
ADI
23+
SOT669
7000
詢價
NXP/恩智浦
24+
SOT669
60000
全新原裝現(xiàn)貨
 詢價
更多PH350SP供應(yīng)商 更新時間2025-4-1 11:05:00

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