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PD55003

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

DESCRIPTION ThePD55003isacommonsourceN-Channel,enhancement-modelateralField-EffectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat12Vincommonsourcemodeatfrequenciesofupto1GHz.PD55003boaststheexcellentg

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

PD55003

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2to

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PD55003

包裝：帶 封裝/外殼：PowerSO-10 裸露底部焊盤 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 40V 500MHZ PWRSO-10

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

PD55003-E

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Description ThePD55003-EisacommonsourceN-channel,enhancement-modelateralField-EffectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat12Vincommonsourcemodeatfrequenciesofupto1GHz.PD55003boaststheexcellent

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

PD55003-E

RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs

Features ■Excellentthermalstability ■Commonsourceconfiguration ■POUT=3Wwith17dBgain@500MHz/12.5V Description ThePD55003-EisacommonsourceN-channel, enhancement-modelateralfield-effectRFpower transistor.Itisdesignedforhighgain,broadband commercialandind

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

PD55003-E_V01

RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs

Features ■Excellentthermalstability ■Commonsourceconfiguration ■POUT=3Wwith17dBgain@500MHz/12.5V Description ThePD55003-EisacommonsourceN-channel, enhancement-modelateralfield-effectRFpower transistor.Itisdesignedforhighgain,broadband commercialandind

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

PD55003-E-E

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Description ThePD55003-EisacommonsourceN-channel,enhancement-modelateralField-EffectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat12Vincommonsourcemodeatfrequenciesofupto1GHz.PD55003boaststheexcellent

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

PD55003L

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

PD55003L

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2to

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PD55003L-E

RF POWER TRANSISTOR The LdmoST Plastic FAMILY

Description ThePD55003L-EisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplication.Itoperatesat12Vincommonsourcemodeatfrequenciesofupto1GHz.PD55003L-Eboaststheexcelle

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

PD55003S

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

DESCRIPTION ThePD55003isacommonsourceN-Channel,enhancement-modelateralField-EffectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat12Vincommonsourcemodeatfrequenciesofupto1GHz.PD55003boaststheexcellentg

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

PD55003S-E

RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs

Features ■Excellentthermalstability ■Commonsourceconfiguration ■POUT=3Wwith17dBgain@500MHz/12.5V Description ThePD55003-EisacommonsourceN-channel, enhancement-modelateralfield-effectRFpower transistor.Itisdesignedforhighgain,broadband commercialandind

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

PD55003S-E-E

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Description ThePD55003-EisacommonsourceN-channel,enhancement-modelateralField-EffectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat12Vincommonsourcemodeatfrequenciesofupto1GHz.PD55003boaststheexcellent

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

PD55003STR-E

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Description ThePD55003-EisacommonsourceN-channel,enhancement-modelateralField-EffectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat12Vincommonsourcemodeatfrequenciesofupto1GHz.PD55003boaststheexcellent

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

PD55003STR-E

RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs

Features ■Excellentthermalstability ■Commonsourceconfiguration ■POUT=3Wwith17dBgain@500MHz/12.5V Description ThePD55003-EisacommonsourceN-channel, enhancement-modelateralfield-effectRFpower transistor.Itisdesignedforhighgain,broadband commercialandind

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

PD55003TR-E

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Description ThePD55003-EisacommonsourceN-channel,enhancement-modelateralField-EffectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat12Vincommonsourcemodeatfrequenciesofupto1GHz.PD55003boaststheexcellent

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

PD55003TR-E

RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs

Features ■Excellentthermalstability ■Commonsourceconfiguration ■POUT=3Wwith17dBgain@500MHz/12.5V Description ThePD55003-EisacommonsourceN-channel, enhancement-modelateralfield-effectRFpower transistor.Itisdesignedforhighgain,broadband commercialandind

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

PD55003L-E

包裝：散裝 封裝/外殼：8-PowerVDFN 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：TRANSISTOR RF 5X5 POWERFLAT

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

PD55003S

包裝：帶 封裝/外殼：PowerSO-10 裸露底部焊盤 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 40V 500MHZ PWRSO-10

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

產(chǎn)品屬性

  • 產(chǎn)品編號：

    PD55003

  • 制造商：

    STMicroelectronics

  • 類別：

    分立半導體產(chǎn)品 > 晶體管 - FET，MOSFET - 射頻

  • 包裝：

    帶

  • 晶體管類型：

    LDMOS

  • 頻率：

    500MHz

  • 增益：

    17dB

  • 額定電流（安培）：

    2.5A

  • 功率 - 輸出：

    3W

  • 封裝/外殼：

    PowerSO-10 裸露底部焊盤

  • 供應商器件封裝：

    10-PowerSO

  • 描述：

    FET RF 40V 500MHZ PWRSO-10

供應商型號品牌批號封裝庫存備注價格
ST(意法)
21+
5000
只做原裝 假一罰百 可開票 可售樣
 詢價
ST(意法)
2310+
PowerSO-10 裸露底部焊盤
8847
只做原裝現(xiàn)貨假一罰十!價格最低!只賣原裝現(xiàn)貨
 詢價
ST
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
ST
2017+
SOP
6528
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
ST
24+
so-10rf
201
現(xiàn)貨供應
 詢價
ST
23+
DFN
9800
全新原裝現(xiàn)貨,假一賠十
 詢價
ST
23+
TO-59
8510
原裝正品代理渠道價格優(yōu)勢
 詢價
ST
2021+
HSOP
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
ST(意法)
23+
NA
20094
正納10年以上分銷經(jīng)驗原裝進口正品做服務做口碑有支持
 詢價
22+
NA
3000
加我QQ或微信咨詢更多詳細信息,
 詢價
更多PD55003供應商 更新時間2024-11-12 16:30:00

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