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PD20010S-E

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

PD20010S-E

包裝：托盤 封裝/外殼：PowerSO-10RF 裸露底部焊盤（2 條直引線） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：TRANS RF N-CH FET POWERSO-10RF

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

PD20010STR-E

RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs

Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

PD20010TR-E

RFpowertransistor,LdmoSTplasticfamilyN-channelenhancement-modelateralMOSFETs

Description ThePD20010-EisacommonsourceN-Channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20010-Eboaststheexcell

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

PNE20010ER

200V,1Ahyperfastrecoveryrectifier

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PNE20010ER-Q

200V,1Ahyperfastrecoveryrectifier

1.Generaldescription Highpowerdensity,hyperfastrecoveryrectifierwithhigh-efficiencyplanartechnology, encapsulatedinasmallandflatleadSOD123WSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?ReversevoltageVR≤200V ?ForwardcurrentIF≤1A ?Hyp

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PNE20010EXD

200V,1Ahyperfastrecoveryrectifier

1.Generaldescription Highpowerdensity,hyperfastrecoveryrectifierwithhigh-efficiencyplanartechnology, encapsulatedinaCFP2-HP(SOD323HP)powerandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Reversevoltage:VR≤200V ?Forwardcurrent:I

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PNE20010EXD-Q

200V,1Ahyperfastrecoveryrectifier

1.Generaldescription Highpowerdensity,hyperfastrecoveryrectifierwithhigh-efficiencyplanartechnology, encapsulatedinaCFP2-HP(SOD323HP)powerandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Reversevoltage:VR≤200V ?Forwardcurrent:I

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

STD-20010T

ADAPTER-18W

VOLGEN

Volgen America/Kaga Electronics USA

T-20010

SCRTriggerandControlTransformers

RHOMBUS-IND

Rhombus Industries Inc.

UFT20010

UltrafastRecoveryModules

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UFT20010

ULTRAFASTRECOVERYMODULES

MicrosemiMicrosemi Corporation

美高森美美高森美公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    PD20010S-E

  • 制造商：

    STMicroelectronics

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 射頻

  • 包裝：

    托盤

  • 晶體管類型：

    LDMOS

  • 頻率：

    2GHz

  • 增益：

    11dB

  • 額定電流（安培）：

    5A

  • 功率 - 輸出：

    10W

  • 封裝/外殼：

    PowerSO-10RF 裸露底部焊盤（2 條直引線）

  • 供應(yīng)商器件封裝：

    PowerSO-10RF（直引線）

  • 描述：

    TRANS RF N-CH FET POWERSO-10RF

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
24+
35200
一級(jí)代理/放心采購(gòu)
 詢價(jià)
STM
1809+
SOP-10
326
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
22+
NA
3000
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
STMicroelectronics
2022+
PowerSO-10RF(直引線)
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
 詢價(jià)
ST
2024+
PowerSO-10RF
16000
原裝優(yōu)勢(shì)絕對(duì)有貨
 詢價(jià)
2406+
650
誠(chéng)信經(jīng)營(yíng)!進(jìn)口原裝!量大價(jià)優(yōu)!
 詢價(jià)
ST
22+
PowerSO10RF (Straight Lead)
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
STMicro.
23+
PowerSO-10RF
7750
全新原裝優(yōu)勢(shì)
 詢價(jià)
ST
23+
原廠封裝
13528
振宏微原裝正品,假一罰百
 詢價(jià)
ST/意法
23+
STR
10000
公司只做原裝正品
 詢價(jià)
更多PD20010S-E供應(yīng)商 更新時(shí)間2024-12-28 19:37:00

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