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BCP53-10H

Marking:P5310H;Package:SC-73;80 V, 1 A PNP medium power transistors

Generaldescription PNPmediumpowertransistorsinamediumpowerSOT223(SC-73)Surface-MountedDevice(SMD)plasticpackage. Featuresandbenefits ■HighcollectorcurrentcapabilityICandICM ■Threecurrentgainselections ■Highpowerdissipationcapability ■High-temperatureapplicat

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BCP53-10H

Marking:P5310H;Package:SC-73;80 V, 1 A PNP medium power transistors

Featuresandbenefits ?HighcollectorcurrentcapabilityICandICM ?Threecurrentgainselections ?Highpowerdissipationcapability ?High-temperatureapplicationsupto175?C ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BCP53-10H-Q

Marking:P5310H;Package:SOT223;80 V, 1 A PNP medium power transistors

1.Generaldescription PNPmediumpowertransistorsinaSOT223(SC-73)Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits ?HighcollectorcurrentcapabilityICandICM ?Threecurrentgainselections ?Highpowerdissipationcapability ?High-temperatureapplications

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BCP53-16H

Marking:P5310H;Package:SC-73;80 V, 1 A PNP medium power transistors

Generaldescription PNPmediumpowertransistorsinamediumpowerSOT223(SC-73)Surface-MountedDevice(SMD)plasticpackage. Featuresandbenefits ■HighcollectorcurrentcapabilityICandICM ■Threecurrentgainselections ■Highpowerdissipationcapability ■High-temperatureapplicat

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

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