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P25Q21LA-NXH-IR

Ultra Low Power, 2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q21LA-NXH-IT

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q21LA-NXH-IW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q21LA-NXH-IY

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q21LA-NXH-KR

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q21LA-NXH-KT

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q21LA-NXH-KW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q21LA-NXH-KY

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q21LA-SSH-IR

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q21LA-SSH-IT

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q21LA-SSH-IW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q21LA-SSH-IY

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q21LA-SSH-KR

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q21LA-SSH-KT

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q21LA-SSH-KW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q21LA-SSH-KY

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q21LA-SUH-IR

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q21LA-SUH-IT

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q21LA-SUH-IW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q21LA-SUH-IY

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
PUYA/普冉
2024+
SOP-8
188600
全新原廠原裝正品現(xiàn)貨 歡迎咨詢
詢價(jià)
PUYA/普冉
2023
DFN8盤
2010
原廠代理渠道,正品保障
詢價(jià)
PUYA
22+
USON8
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價(jià)
普冉(PUYA)
2117+
USON-8_3x2x0.55mm
315000
一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排單到貨
詢價(jià)
PUYA/普冉
21+
SON-10
6000
PUYA/普冉 P25Q21L-UXH-IR SON-10 21+
詢價(jià)
普冉(PUYA)
2021+
USON-8_3x2x0.55mm
499
詢價(jià)
PUYA/普冉
23+
USON8
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
PUYA/普冉
2022
USON8
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
PUYA/普冉
22+
USON8
8900
英瑞芯只做原裝正品!!!
詢價(jià)
PUYA/普冉
22+
USON8
57455
鄭重承諾只做原裝進(jìn)口貨
詢價(jià)
更多P25Q21LA-NXH-IR供應(yīng)商 更新時(shí)間2024-12-22 9:00:00