首頁 >P25Q21LA-SSH-IT>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
P25Q21LA-SSH-IT | Ultra Low Power, 2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | |
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
PUYA/普冉 |
2024+ |
SOP-8 |
188600 |
全新原廠原裝正品現(xiàn)貨 歡迎咨詢 |
詢價 | ||
PUYA/普冉 |
2023 |
DFN8盤 |
2010 |
原廠代理渠道,正品保障 |
詢價 | ||
PUYA |
22+ |
USON8 |
9852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
普冉(PUYA) |
2117+ |
USON-8_3x2x0.55mm |
315000 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
PUYA/普冉 |
21+ |
SON-10 |
6000 |
PUYA/普冉 P25Q21L-UXH-IR SON-10 21+ |
詢價 | ||
普冉(PUYA) |
2021+ |
USON-8_3x2x0.55mm |
499 |
詢價 | |||
PUYA/普冉 |
23+ |
USON8 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
PUYA/普冉 |
2022 |
USON8 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
PUYA/普冉 |
22+ |
USON8 |
8900 |
英瑞芯只做原裝正品!!! |
詢價 | ||
PUYA/普冉 |
22+ |
USON8 |
57455 |
鄭重承諾只做原裝進口貨 |
詢價 |
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