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OM11N60SA

POWERMOSFETINHERMETICISOLATED

[Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

OM11N60SA

POWERMOSFETINHERMETICISOLATED

DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperation).They

IRF

International Rectifier

PCFC11N60W

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

PSM11N60CT

11A600VSingleN-ChannelPowerMOSFET

PFC

PFC Device Inc.

PSM11N60CTF

11A600VSingleN-ChannelPowerMOSFET

PFC

PFC Device Inc.

SIHH11N60E

ESeriesPowerMOSFET

FEATURES ?Fullylead(Pb)-freedevice ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Kelvinconnectionforreducedgatenoise ?Materialcategorization:fordefinit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHH11N60E

Reducedswitchingandconductionlosses

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHH11N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SPA11N60CFD

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplica

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA11N60CFD

CoolMOSPowerTransistor

Features ?Newrevolutionaryhighvoltagetechnology ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Periodicavalancherated ?QualifiedaccordingtoJEDEC0)fortargetapplication

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA11N60CFD

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA11N60CFD

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI11N60CFD

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI11N60CFD

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP11N60CFD

N-Channel650V(D-S)MOSFET

FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS)

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

SPP11N60CFD

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Intrinsicfast-recoverybodydiode ?Extremelowreverserecoverycharge

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N60CFD

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.44? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP11N60CFD

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N60CFD

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW11N60CFD

iscN-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤440m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    OM11N60CSA

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-254AA

供應(yīng)商型號品牌批號封裝庫存備注價格
CHINA
23+
TO-254AA
46800
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
CHINA
22+
TO-254AA
640
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方!
 詢價
IR
22+
TO-254AA
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價
IR
23+
TO-254AA
8000
只做原裝現(xiàn)貨
 詢價
NXP
2024+
SOP022
188600
全新原廠原裝正品現(xiàn)貨 歡迎咨詢
 詢價
NXP(恩智浦)
23+
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
 詢價
NXP(恩智浦)
23+
-
7087
NXP原廠渠道,2小時快速發(fā)貨,大量現(xiàn)貨庫存
 詢價
NXP/恩智浦
2023+
LGA
8635
一級代理優(yōu)勢現(xiàn)貨,全新正品直營店
 詢價
NXP/恩智浦
23+
LGA
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價
TELIT
23+
LGA
88
原裝現(xiàn)貨假一賠十
 詢價
更多OM11N60CSA供應(yīng)商 更新時間2024-11-16 15:34:00

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