首頁(yè) >NVBG045N065SC1>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NVBG045N065SC1 | Silicon Carbide SiC MOSFET - 31 mohm, 650V,M2, D2PAK-71 Features ?Typ.RDS(on)=31m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?LowEffectiveOutputCapacitance(Coss=168pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexem | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
SiliconCarbide(SiC)MOSFET–EliteSiC,31mohm,650V,M2,D2PAK-7L Features ?Typ.RDS(on)=31m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?LowEffectiveOutputCapacitance(Coss=168pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(o | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–31mohm,650V,M2,D2PAK-7L Features ?Typ.RDS(on)=31m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?LowEffectiveOutputCapacitance(Coss=168pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(o | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET??SiCPower,SingleN-Channel,D2PAK-7L650V,31m,62A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET-33mohm,650V,M2,TOLL Features ?Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?LowEffectiveOutputCapacitance(Coss=162pF) ?100AvalancheTested ?TJ=175°C ?RoHSCompliant TypicalApplications ?SMPS(SwitchingModePowerSupplies) | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbideSiCMOSFET-32mohm,650V,M2,TO-247-3L Features ?Typ.RDS(on)=32m@VGS=18V Typ.RDS(on)=42m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=162pF) ?100AvalancheTested ?TJ | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET-33mohm,650V,M2,Power88 Features ?Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?LowEffectiveOutputCapacitance(Coss=162pF) ?100AvalancheTested ?TJ=175?C ?RoHSCompliant TypicalApplications ?SMPS(SwitchingModePowerSupplies) | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET-33mohm,650V,M2,Power88 Features ?Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?LowEffectiveOutputCapacitance(Coss=162pF) ?100AvalancheTested ?TJ=175°C ?RoHSCompliant TypicalApplications ?SMPS(SwitchingModePowerSupplies) | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–32mohm,650V,M2,TO-247-3L Features ?Typ.RDS(on)=32m@VGS=18V Typ.RDS(on)=42m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=162pF) ?100%AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSComplia | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ON |
23+ |
D2PAK7 (TO-263-7L HV) |
100000 |
全新原裝 |
詢價(jià) | ||
onsemi(安森美) |
23+ |
D2PAK-7 |
8357 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。 |
詢價(jià) | ||
ON |
21+ |
NA |
3000 |
進(jìn)口原裝 假一罰十 現(xiàn)貨 |
詢價(jià) | ||
ON |
21+ |
NA |
3000 |
進(jìn)口原裝 假一罰十 現(xiàn)貨 |
詢價(jià) | ||
onsemi |
23+ |
D2PAK-7L |
1356 |
原廠正品現(xiàn)貨SiC MOSFET全系列 |
詢價(jià) | ||
Onsemi/瀹夋.緹?800 |
瀹炲崟璇風(fēng)數(shù)璇濊仈緋?189234603 |
22 |
詢價(jià) | ||||
ON |
22+ |
NA |
10340 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
24+ |
N/A |
73000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
ON SEMICONDUCTOR |
24+ |
con |
35960 |
查現(xiàn)貨到京北通宇商城 |
詢價(jià) | ||
ONN |
2324+ |
10340 |
原裝正品,超低價(jià)出售 |
詢價(jià) |
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