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NTH4L032N065M3S_V01

Silicon Carbide (SiC) MOSFET - EliteSiC, 32mohm, 650 V, M3S, TO247-4L

Features ?TypicalRDS(ON)=32m@VGS=18V ?UltraLowGateCharge(QG(tot)=55nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=114pF) ?100%AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection)

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L040N120M3S

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L

Features ?Typ.RDS(on)=40m@VGS=18V ?UltraLowGateCharge(QG(tot)=75nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=80pF) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L040N120M3S

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L

Features ?Typ.RDS(on)=40m@VGS=18V ?UltraLowGateCharge(QG(tot)=75nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=80pF) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L040N120M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-4L

Features ?Typ.RDS(on)=40m@VGS=18V ?UltraLowGateCharge(QG(tot)=75nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=80pF) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L040N120M3S_V01

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L

Features ?Typ.RDS(on)=40m@VGS=18V ?UltraLowGateCharge(QG(tot)=75nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=80pF) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L040N120M3S_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-4L

Features ?Typ.RDS(on)=40m@VGS=18V ?UltraLowGateCharge(QG(tot)=75nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=80pF) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L040N120SC1

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-4L

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(QG(tot)=106nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=137pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typi

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L040N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-4L

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(QG(tot)=106nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=137pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typica

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L040N120SC1

SiC N-Channel MOSFET

FEATURES ·HighSpeedSwitchingwithLowCapacitances ·HighBlockingVoltagewithLowOn-Resistance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·High-voltageCapacitiveLoads ·Motordrives

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NTH4L040N120SC1_V01

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-4L

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(QG(tot)=106nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=137pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typi

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    NTH

  • 功能描述：

    烙鐵 Weller Chisel Tip For WMP Solder Penc

  • RoHS：

    否

  • 制造商：

    Weller

  • 產(chǎn)品：

    Soldering Stations

  • 類型：

    Digital, Iron, Stand, Cleaner

  • 瓦特：

    50 W

  • 最大溫度：

    + 850 F

  • 電纜類型：

    US Cord Included

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