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NTH4L014N120M3P

Silicon Carbide SiC MOSFET - 14mohm, 1200V, M3, TO247-4L

Features ?Typ.RDS(on)=14m@VGS=18V ?LowSwitchingLosses(Typ.EON1308Jat74A,800V) ?100AvalancheTested ?TheseDevicesareRoHSCompliant TypicalApplications ?SolarInverters ?ElectricVehicleChargingStations ?UPS(UninterruptiblePowerSupplies) ?EnergySto

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L015N065SC1

Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L

Features ?Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V ?UltraLowGateCharge(QG(tot)=283nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=430pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Fr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L015N065SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L

Features ?Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V ?UltraLowGateCharge(QG(tot)=283nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=430pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Fr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L015N065SC1_V01

Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L

Features ?Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V ?UltraLowGateCharge(QG(tot)=283nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=430pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Fr

ONSEMION Semiconductor

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NTH4L015N065SC1_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L

Features ?Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V ?UltraLowGateCharge(QG(tot)=283nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=430pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Fr

ONSEMION Semiconductor

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NTH4L018N075SC1

Silicon Carbide (SiC) MOSFET – 13.5 mohm, 750V, M2, TO-247-4L

Features ?Typ.RDS(on)=13.5m@VGS=18V Typ.RDS(on)=18m@VGS=15V ?UltraLowGateCharge(QG(tot)=262nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=365pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L020N090SC1

Marking：H4L020090SC1；Package：TO247-4L；Silicon Carbide SiC MOSFET - 20 mohm, 900 V, M2, TO-247-4L

Features ?Typ.RDS(on)=20m@VGS=15V Typ.RDS(on)=16m@VGS=18V ?UltraLowGateCharge(QG(tot)=196nC) ?LowEffectiveOutputCapacitance(Coss=296pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinter

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L020N120SC1

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L

Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=220nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=258pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typi

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L020N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-4L

Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=220nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=258pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typi

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L020N120SC1_V01

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L

Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=220nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=258pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typi

ONSEMION Semiconductor

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詳細(xì)參數(shù)

  • 型號：

    NTH

  • 功能描述：

    烙鐵 Weller Chisel Tip For WMP Solder Penc

  • RoHS：

    否

  • 制造商：

    Weller

  • 產(chǎn)品：

    Soldering Stations

  • 類型：

    Digital, Iron, Stand, Cleaner

  • 瓦特：

    50 W

  • 最大溫度：

    + 850 F

  • 電纜類型：

    US Cord Included

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