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NSS1001CL

Marking：NSS1001G；Package：LFPAK8；Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK

Thisdeviceisbipolarjunctiontransistorfeaturinghighcurrent,low saturationvoltage,andhighspeedswitching. Suitableforautomotiveapplications.AEC?Q101qualifiedand PPAPcapable.(NSVS1001CLTWG) Features ?ComplementtoNSS1002CL ?LargeCurrentCapacitance ?LowCollectorto

ONSEMION Semiconductor

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NSS1001CLTWG

Marking：NSS1001G；Package：LFPAK8；Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK

Thisdeviceisbipolarjunctiontransistorfeaturinghighcurrent,low saturationvoltage,andhighspeedswitching. Suitableforautomotiveapplications.AEC?Q101qualifiedand PPAPcapable.(NSVS1001CLTWG) Features ?ComplementtoNSS1002CL ?LargeCurrentCapacitance ?LowCollectorto

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NSVS1001CLTWG

Marking：NSS1001G；Package：LFPAK8；Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK

Thisdeviceisbipolarjunctiontransistorfeaturinghighcurrent,low saturationvoltage,andhighspeedswitching. Suitableforautomotiveapplications.AEC?Q101qualifiedand PPAPcapable.(NSVS1001CLTWG) Features ?ComplementtoNSS1002CL ?LargeCurrentCapacitance ?LowCollectorto

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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