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NP82N055EHE

MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=3500pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP82N055EHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=3500pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N055EHE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP82N055EHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP82N055EHE-E1-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=3500pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N055EHE-E2-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=3500pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N055EHE-E1-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP82N055EHE-E2-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP82N055ELE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP82N055ELE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) ?Lowinputcapacitance Ciss=4

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    NP82N055EHE

  • 制造商：

    NEC

  • 制造商全稱(chēng)：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
22+
TO-263
6000
十年配單,只做原裝
 詢(xún)價(jià)
日本NEC
23+
TO-263
33000
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢(xún)價(jià)
NEC
23+
TO-263
6000
原裝正品，支持實(shí)單
 詢(xún)價(jià)
NEC
22+
TO-263
25000
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單
 詢(xún)價(jià)
NEC
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
NEC
1922+
TO-263
216
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
 詢(xún)價(jià)
RENESAS/瑞薩
23+
TO-251
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢(xún)價(jià)
NEC
24+
TO-263
8866
詢(xún)價(jià)
NEC
6000
面議
19
TO-263
 詢(xún)價(jià)
RENESAS(瑞薩)/IDT
23+
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
 詢(xún)價(jià)
更多NP82N055EHE供應(yīng)商 更新時(shí)間2025-3-29 14:01:00

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