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NP60N04PDK

40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description TheNP60N04PDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.95m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedfor

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04PDK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.95mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP60N04PDK-E1-AY

40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description TheNP60N04PDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.95m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedfor

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04PDK-E2-AY

40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description TheNP60N04PDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.95m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedfor

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04PDK_15

40 V ??60 A ??N-channel Power MOS FET Application: Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04VDK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.85mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP60N04VDK

40V–60A–N-channelPowerMOSFETApplication:Automotive

Description TheNP60N04VDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.85m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedf

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04VLK

40V–60A–N-channelPowerMOSFETApplication:Automotive

Description TheNP60N04VLKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.9m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedfor

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04VLK

N-channelPowerMOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N04VLK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.9mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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RENESAS/瑞薩
22+
TO-263
12500
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RENESAS/瑞薩
22+
TO-263
9000
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NATLINEAR/南麟
23+
PDFN33-8L
33000
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NATLINEAR/南麟
24+
PDFN3*3-8L
30000
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RENESAS/瑞薩
23+
TO-252
30000
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24+
TO252
7350
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24+
N/A
48000
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NK/南科功率
2025+
TO-252
986966
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Renesas
19+
TO-252
87455
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23+
TO-252
50000
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更多NP60N04PDK供應(yīng)商 更新時(shí)間2025-6-8 11:01:00