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NJ6N60D-LI

6.2A 600V N-CHANNEL POWER MOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ6N60D-TR

6.2A600VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ6N60F-LI

6.2A600VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ6N60-LI

6.2A600VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NTB6N60

PowerMOSFET6Amps,600VoltsN?ChannelTO?220

Designedforhighvoltage,highspeedswitchingapplicationsin powersupplies,converters,powermotorcontrolsandbridgecircuits. Features ?HigherCurrentRating ?LowerRDS(on) ?LowerCapacitances ?LowerTotalGateCharge ?TighterVSDSpecifications ?AvalancheEnergySpecified

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTP6N60

PowerMOSFET6Amps,600VoltsN?ChannelTO?220

Designedforhighvoltage,highspeedswitchingapplicationsin powersupplies,converters,powermotorcontrolsandbridgecircuits. Features ?HigherCurrentRating ?LowerRDS(on) ?LowerCapacitances ?LowerTotalGateCharge ?TighterVSDSpecifications ?AvalancheEnergySpecified

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTP6N60

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

P6N60

600VN-ChannelMOSFET

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenerg

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

P6N60FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS)

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

PHB6N60BT

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

PHB6N60E

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

PHB6N60E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP6N60Eissupplied

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP6N60E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP6N60Eissupplied

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHX6N60E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHX6N60Eissupplied

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

RMP6N60IP

N-CHANNELENHANCEMENTMODEMOSFET

FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest

RECTRON

Rectron Semiconductor

RMP6N60LD

N-CHANNELENHANCEMENTMODEMOSFET

FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest

RECTRON

Rectron Semiconductor

RMP6N60TI

N-CHANNELENHANCEMENTMODEMOSFET

FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest

RECTRON

Rectron Semiconductor

SGP6N60UF

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedswi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGP6N60UFD

Ultra-FastIGBT

GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeeds

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGR6N60UF

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses. TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedsw

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
JRC
13+
DIP-3
3358
原裝分銷(xiāo)
 詢(xún)價(jià)
JRC原裝
22+23+
DIP-3
32910
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢(xún)價(jià)
JRC原裝
1740+
DIP-3
8956
只做原裝現(xiàn)貨、主營(yíng)光電元器件/門(mén)市現(xiàn)貨
 詢(xún)價(jià)
JRC
24+
DIP-3
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢(xún)價(jià)
JRC
24+
DMP
62300
原裝現(xiàn)貨/放心購(gòu)買(mǎi)
 詢(xún)價(jià)
PEPPERL+FUCHS
24+
con
10000
查現(xiàn)貨到京北通宇商城
 詢(xún)價(jià)
24+
3000
公司存貨
 詢(xún)價(jià)
6000
面議
19
DIP/SMD
 詢(xún)價(jià)
GPS
23+
DIP
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
GPS
21+
DIP
10000
原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
更多NJ6N60D-LI供應(yīng)商 更新時(shí)間2025-1-8 9:00:00

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