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NESG3031M05

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG3031M05

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

FEATURES ?LOWNOISEFIGUREANDHIGH-GAIN NF=0.95dBTYP,Ga=10dBTYP@VCE=2V,IC=6mA,f=5.2GHz NF=1.1dBTYP,Ga=9.5dBTYP@VCE=2V,IC=6mA,f=5.8GHz ?MAXIMUMSTABLEPOWERGAIN: MSG=14.0dBTYP@VCE=3V,IC=20mA,f=5.8GHz ?SiGeHBTTECHNOLOGY:

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG3031M05

NPN SILICON GERMANIUM RF TRANSISTOR

CEL

California Eastern Labs

NESG3031M05-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG3031M05-T1

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

FEATURES ?LOWNOISEFIGUREANDHIGH-GAIN NF=0.95dBTYP,Ga=10dBTYP@VCE=2V,IC=6mA,f=5.2GHz NF=1.1dBTYP,Ga=9.5dBTYP@VCE=2V,IC=6mA,f=5.8GHz ?MAXIMUMSTABLEPOWERGAIN: MSG=14.0dBTYP@VCE=3V,IC=20mA,f=5.8GHz ?SiGeHBTTECHNOLOGY:

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG3031M05-T1

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG3031M05-T1-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG3031M05-T1

NPN SILICON GERMANIUM RF TRANSISTOR

CEL

California Eastern Labs

NESG3031M05-T1-A

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)

CEL

California Eastern Labs

NESG3031M05-EVNF16

包裝：盒 類別：開發(fā)板，套件，編程器 射頻評(píng)估和開發(fā)套件，開發(fā)板 描述：EVAL BOARD NESG3031M05 1.6GHZ

CEL

California Eastern Labs

NESG3031M05-EVNF58

包裝：盒 類別：開發(fā)板，套件，編程器 射頻評(píng)估和開發(fā)套件，開發(fā)板 描述：EVAL BOARD NESG3031M05 5.8GHZ

CEL

California Eastern Labs

NESG3031M05-EVNF58-A

包裝：盒 類別：開發(fā)板，套件，編程器 射頻評(píng)估和開發(fā)套件，開發(fā)板 描述：EVAL BOARD NESG3031M05

CEL

California Eastern Labs

詳細(xì)參數(shù)

  • 型號(hào)：

    NESG3031M05

  • 功能描述：

    射頻硅鍺晶體管 RO 551-NESG3031M05-A

  • RoHS：

    否

  • 制造商：

    Infineon Technologies 發(fā)射極 - 基極電壓

  • 封裝：

    Reel

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NEC原裝正品專賣價(jià)格
23+
SOT343
80000
專注原裝正品現(xiàn)貨特價(jià)中量大可定
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NECT1K
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3000
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NEC
2018+
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6528
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NECT1K
22+23+
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17683
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NEC
22+
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19777
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NECT1K
24+
SOT-343
3000
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CEL
23+
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19960
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NEC
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1062
只做原裝正品,不止網(wǎng)上數(shù)量,歡迎電話微信查詢!
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NEC
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3000
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更多NESG3031M05供應(yīng)商 更新時(shí)間2024-12-29 14:00:00

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