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NESG3031M05-T1

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

FEATURES ?LOWNOISEFIGUREANDHIGH-GAIN NF=0.95dBTYP,Ga=10dBTYP@VCE=2V,IC=6mA,f=5.2GHz NF=1.1dBTYP,Ga=9.5dBTYP@VCE=2V,IC=6mA,f=5.8GHz ?MAXIMUMSTABLEPOWERGAIN: MSG=14.0dBTYP@VCE=3V,IC=20mA,f=5.8GHz ?SiGeHBTTECHNOLOGY:

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NESG3031M05-T1

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG3031M05-T1

NPN SILICON GERMANIUM RF TRANSISTOR

CEL

California Eastern Labs

NESG3031M05-T1-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG3031M05-T1-A

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)

CEL

California Eastern Labs

詳細參數(shù)

  • 型號:

    NESG3031M05-T1

  • 制造商:

    California Eastern Laboratories(CEL)

  • 功能描述:

    Si Small Signal Bipolar Trans

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更多NESG3031M05-T1供應商 更新時間2025-1-1 9:00:00