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NE425S01-T1B

C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION TheNE425S01isaHetero-JunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBSandothercommercialapplications. NECsstringentqualityassuranceandtestproceduresassurethehigh

CEL

California Eastern Labs

NE428M01

HETERO JUNCTION FIELD EFFECT TRANSISTOR

CtoKuBANDSUPERLOWNOISEAMPLIFIER N-CHANNELHJ-FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE428M01-T1

HETERO JUNCTION FIELD EFFECT TRANSISTOR

CtoKuBANDSUPERLOWNOISEAMPLIFIER N-CHANNELHJ-FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE429M01

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION TheNE429M01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBS,TVROandanothercommercialsystems. FEATURES ?Superlownoisefigure&Highassociatedgain

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE429M01

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION TheNE429M01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforsecondandthirdstagelownoiseamplifiersinDBS,TVROandothercommercialsystems. NECsstringentquali

CEL

California Eastern Labs

NE429M01-T1

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION TheNE429M01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBS,TVROandanothercommercialsystems. FEATURES ?Superlownoisefigure&Highassociatedgain

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE429M01-T1

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION TheNE429M01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforsecondandthirdstagelownoiseamplifiersinDBS,TVROandothercommercialsystems. NECsstringentquali

CEL

California Eastern Labs

NE434S01

C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION TheNE434S01isaHereroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforTVROandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGainNF=0.3

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE434S01

C BAND SUPER LOW NOISE HJ FET

DESCRIPTION TheNE434S01isaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforTVROandothercommercialsystems. FEATURES ?VERYLOWNOISEFIGURE:

CEL

California Eastern Labs

NE434S01-T1

C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION TheNE434S01isaHereroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforTVROandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGainNF=0.3

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    NE4

  • 制造商:

    Essentra Components

  • 類(lèi)別:

    電纜,電線 - 管理 > 電纜支撐與緊固件

  • 系列:

    Richco

  • 包裝:

    散裝

  • 類(lèi)型:

    線夾,P 型

  • 開(kāi)口尺寸:

    0.250"(6.35mm)

  • 安裝類(lèi)型:

    緊固件

  • 材料:

  • 顏色:

    黑色,銀色

  • 寬度:

    0.375"(9.53mm)

  • 面板孔尺寸:

    0.204"(5.18mm)

  • 材料厚度:

    0.031"(0.80mm)

  • 特性:

    保護(hù)涂層

  • 描述:

    CBL CLAMP P-TYPE FASTENER

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Richco
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22+
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3597
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NEC
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SOT26
1560
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PHI
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DIP8
283
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PHILIPS
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SO-8
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NXP
10+
DIP-8
7800
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PHIL
24+/25+
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NEC
24+
SO86
4897
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NEC
17+
6200
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更多NE4供應(yīng)商 更新時(shí)間2025-4-16 16:06:00