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NE32484A中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

NE32484A
廠商型號(hào)

NE32484A

功能描述

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

文件大小

55.54 Kbytes

頁(yè)面數(shù)量

5 頁(yè)

生產(chǎn)廠商 Renesas Electronics America
企業(yè)簡(jiǎn)稱(chēng)

NEC瑞薩

中文名稱(chēng)

日本瑞薩電子株式會(huì)社官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-24 20:00:00

NE32484A規(guī)格書(shū)詳情

DESCRIPTION

The NE32484A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications.

NECs stringent quality assurance and test procedures assure the highest reliability and performance.

FEATURES

? VERY LOW NOISE FIGURE:

0.6 dB typical at 12 GHz

? HIGH ASSOCIATED GAIN:

11 dB typical at 12 GHz

? LG = 0.25 μm, WG = 200 μm

? LOW COST METAL/CERAMIC PACKAGE

? TAPE & REEL PACKAGING OPTION AVAILABLE

產(chǎn)品屬性

  • 型號(hào):

    NE32484A

  • 制造商:

    NEC

  • 制造商全稱(chēng):

    NEC

  • 功能描述:

    ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

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