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NE202930-T1

Silicon NPN Epitaxial High Frequency Transistor

FEATURES ?HightransitionfrequencyfT=11GHzTYP. ?Idealforlownoiseandlowdistortionamplification ?Suitableforequipmentsoflowcollectorvoltage(Lessthan5V) ?Suitableforupto1GHzapplications ??????? APPLICATIONS ?LNA(LowNoiseAmplifier)orpowersplitterfordigi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE202930-T1

Silicon NPN Epitaxial High Frequency Transistor

FEATURES ?HightransitionfrequencyfT=11GHzTYP. ?Idealforlownoiseandlowdistortionamplification ?Suitableforequipmentsoflowcollectorvoltage(Lessthan5V) ?Suitableforupto1GHzapplications ??????? APPLICATIONS ?LNA(LowNoiseAmplifier)orpowersplitterfordigi

CEL

California Eastern Labs

NE202930-T1-A

Silicon NPN Epitaxial High Frequency Transistor

FEATURES ?HightransitionfrequencyfT=11GHzTYP. ?Idealforlownoiseandlowdistortionamplification ?Suitableforequipmentsoflowcollectorvoltage(Lessthan5V) ?Suitableforupto1GHzapplications ??????? APPLICATIONS ?LNA(LowNoiseAmplifier)orpowersplitterfordigi

CEL

California Eastern Labs

NE202XX

ULTRA LOW NOISE K BAND HETERO JUNCTION FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE202XX-1.4

ULTRA LOW NOISE K BAND HETERO JUNCTION FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE219

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTIONANDAPPLICATIONS TheNE219seriesofNPNsiliconbipolartransistorsisdesignedforsmallsignalamplifierandoscillatorapplicationsup6GHz. FEATURES ●HIGHfr:8GHz ●LOWNOISE: 1dBat0.5GHz 2.2dBat2GHz ●HIGHCOLLECTORCURRENT:80mA ●HIGHOSCILLATORPOWE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE21903

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTIONANDAPPLICATIONS TheNE219seriesofNPNsiliconbipolartransistorsisdesignedforsmallsignalamplifierandoscillatorapplicationsup6GHz. FEATURES ●HIGHfr:8GHz ●LOWNOISE: 1dBat0.5GHz 2.2dBat2GHz ●HIGHCOLLECTORCURRENT:80mA ●HIGHOSCILLATORPOWE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE21908

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTIONANDAPPLICATIONS TheNE219seriesofNPNsiliconbipolartransistorsisdesignedforsmallsignalamplifierandoscillatorapplicationsup6GHz. FEATURES ●HIGHfr:8GHz ●LOWNOISE: 1dBat0.5GHz 2.2dBat2GHz ●HIGHCOLLECTORCURRENT:80mA ●HIGHOSCILLATORPOWE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE21912

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTIONANDAPPLICATIONS TheNE219seriesofNPNsiliconbipolartransistorsisdesignedforsmallsignalamplifierandoscillatorapplicationsup6GHz. FEATURES ●HIGHfr:8GHz ●LOWNOISE: 1dBat0.5GHz 2.2dBat2GHz ●HIGHCOLLECTORCURRENT:80mA ●HIGHOSCILLATORPOWE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE21935

NPN SILICON HI FREQUNCY TRANSISTOR

DESCRIPTION: TheASINE21935isDesignedforgeneralpurposeandsmallsignalamplifierandoscillatorapplicationsupto6.0GHz. FEATURESINCLUDE: ?Highfrequency8.0GH ?Lownoise,1dBat0.5GHz.

ASI

Advanced Semiconductor

詳細(xì)參數(shù)

  • 型號(hào)：

    NE2

  • 制造商：

    NEC

  • 制造商全稱(chēng)：

    NEC

  • 功能描述：

    ULTRA LOW NOISE K BAND HETERO JUNCTION FET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
23+
原廠封裝
8293
詢(xún)價(jià)
SEEQ
23+
PLCC32
7512
絕對(duì)全新原裝!現(xiàn)貨!特價(jià)!請(qǐng)放心訂購(gòu)!
 詢(xún)價(jià)
PLX
07+
TQFP10
2450
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
 詢(xún)價(jià)
SEEQ
60
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
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ATMEL
2016+
PLCC32
6000
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
 詢(xún)價(jià)
24+
500
真實(shí)現(xiàn)貨庫(kù)存
 詢(xún)價(jià)
NEM
1215+
SOP-16
150000
全新原裝,絕對(duì)正品,公司大量現(xiàn)貨供應(yīng).
 詢(xún)價(jià)
EON
17+
TSOP
6200
100%原裝正品現(xiàn)貨
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nec
24+
N/A
6980
原裝現(xiàn)貨,可開(kāi)13%稅票
 詢(xún)價(jià)
NEC
24+
-
1977
原裝現(xiàn)貨假一罰十
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更多NE2供應(yīng)商 更新時(shí)間2025-3-28 9:00:00

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