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NDF06N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6.0A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NDF06N60Z

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDF06N60Z

N-ChannelPowerMOSFET600V,1.2

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDF06N60Z

NDP06N60Z

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDF06N60ZG

NDP06N60Z

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDF06N60ZG

N-ChannelPowerMOSFET600V,1.2

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDF06N60ZG

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDF06N60ZH

N-ChannelPowerMOSFET600V,1.2

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDF06N60ZH

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDP06N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6.0A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NDP06N60Z

NDP06N60Z

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDP06N60ZG

NDP06N60Z

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

SCT06N60FD

Triac

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

SCT06N60P

Triac

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

SDF06N60

SuperhighdensecelldesignforlowRDS(ON

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

SDUD06N60

SuperhighdensecelldesignforlowRDS(ON).

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

SGB06N60

FastIGBTinNPT-technology

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGB06N60

FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGD06N60

FastIGBTinNPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGD06N60

FastIGBTinNPT-technology

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
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11846
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69820
終端可以免費(fèi)供樣,支持BOM配單!
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1000
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10000
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3000
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VB
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更多NDF06N60EG供應(yīng)商 更新時(shí)間2025-1-19 15:21:00