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NDB506B

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.06Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NDB506BE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.06Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NDB506BL

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.06Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NDD506A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NDD506AE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NDD506B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NDD506BE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NDP506A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.05Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NDP506AE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.05Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NDP506AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.05Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NDP506B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.06Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NDP506BE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.06Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NDP506BL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.06Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NDU506A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NDU506AE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP506

1/2PRESS-FITSTRAIGHTLEADDIODES

SHUNYEShanghai Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

NTE506

SiliconRectifierDiode

Description TheNTE506isasiliconrectifierdiodeisanaxialleadpackagedesignedforfastrecovery,damperandblankingapplications.

NTE

NTE Electronics

NTS506

Activepowerfactorcorrection

EMERSON-NETWORKPOWEREmerson Network Energy Co., Ltd

艾默生網(wǎng)絡能源艾默生網(wǎng)絡能源有限公司

NTS506

Activepowerfactorcorrection

NTS500Series500Watts TotalPower:200-500Watts InputVoltage:85-264Vac 120-300Vdc #ofOutputs:Single SPECIALFEATURES ■Activepowerfactorcorrection ■IECEN61000-3-2compliance ■Remotesense ■Powerfailandremoteinhibit ■Singl

ARTESYN

Artesyn Embedded Technologies

NTS506

Powerfailandremoteinhibit

NTS500Series500Watts TotalPower:200-500Watts InputVoltage:85-264Vac 120-300Vdc #ofOutputs:Single SPECIALFEATURES ■Activepowerfactorcorrection ■IECEN61000-3-2compliance ■Remotesense ■Powerfailandremoteinhibit ■Singl

ARTESYN

Artesyn Embedded Technologies

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10000
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2020+
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350000
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3000
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19
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2022
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80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
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25600
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更多NDB506B供應商 更新時間2024-12-23 10:00:00

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