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NDB6030L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDB6030L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=52A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDB6030PL

P-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseP-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDB6030PL

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

NDP6030

P-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseP-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDP6030

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDP6030

N-ChannelEnhancementModeFieldEffectTransistor

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDP6030

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=46A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDP6030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDP6030L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=52A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDP6030PL

P-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseP-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NI6030E

Full-FeaturedESeriesMultifunctionDAQ12or16-Bit,upto1.25MS/s,upto64AnalogInputs

NI

National Instruments Inc.

NIPCI-6030E

Full-FeaturedESeriesMultifunctionDAQ12or16-Bit,upto1.25MS/s,upto64AnalogInputs

NI

National Instruments Inc.

NIPXI-6030E

Full-FeaturedESeriesMultifunctionDAQ12or16-Bit,upto1.25MS/s,upto64AnalogInputs

NI

National Instruments Inc.

PBFR6030JP

VoltageRange16to28VCurrent60Ampere

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

PE6030

ShortingDustCapforBNCFemale

PASTERNACK

Pasternack Enterprises, Inc.

PH6030L

N-channelTrenchMOSlogiclevelFET

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PL6030JP

PolyimidePassivatedAutoRectifier

YENYOYenyo Technology Co., Ltd.

元耀科技元耀科技股份有限公司

PMEG6030ELP

60V,3AlowleakagecurrentSchottkybarrierrectifier

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PMEG6030ELP-Q

60V,3AlowleakagecurrentSchottkybarrierrectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aSOD128smallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?ExtremelylowleakagecurrentIR=340nA ?Averageforwardcur

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    NDB6030L

  • 功能描述：

    MOSFET N-Ch LL FET Enhancement Mode

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
onsemi(安森美)
23+
TO-263AB
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
ON/安森美
2024
TO-263
505348
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力高端行業(yè)供應(yīng)商
 詢價(jià)
24+
3000
公司存貨
 詢價(jià)
FAIRCHILD
16+
原封裝
320
原裝現(xiàn)貨假一罰十
 詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
FAIRCHILD
1998
TO263
100
原裝現(xiàn)貨海量庫存歡迎咨詢
 詢價(jià)
FSC
1715+
SOP
251156
只做原裝正品現(xiàn)貨假一賠十!
 詢價(jià)
NS
24+
TO-263
90000
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理
 詢價(jià)
NS
6000
面議
19
TO263
 詢價(jià)
FAIR
02+
TO-263
780
庫存剛更新加微13425146986
 詢價(jià)
更多NDB6030L供應(yīng)商 更新時(shí)間2025-1-8 15:57:00

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