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NCE3

CIT SWITCH

CIT

CIT Relay & Switch

NCE3008N

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3008Nusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication. GeneralFeature ●VDS=30V,ID=8A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3008XM

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3008XMusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication.GeneralFeatures ●VDS=30V,ID=8A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3008Y

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3008Yusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication. GeneralFeature ●VDS=30V,ID=8A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3009S

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3009Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=30V,ID=9A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3013J

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3013Jusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=30V,ID=13A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3015S

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3015Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=30V,ID=15A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3030Q

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3030Qusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.Application ●Powerswitchingapplication ●HardSwitchedandHighFrequencyCircuits ●UninterruptiblePow

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3040Q

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3040Qusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications.Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectification

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3045G

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3045Gusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications.Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectification

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3065G

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3065Gusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications.Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectificatio

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3065K

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3065Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=65A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3065Q

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3065Qusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications.Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectification

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3068Q

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3068Qusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectification GeneralFeatures ●VDS=30V,ID=6

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3080IA

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3080IAusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=30V,ID=80A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3085K

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3085Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=30V,ID=85A RDS(ON)=4.2mΩ@VGS=10V(Typ) RDS(ON)=7.0mΩ@VGS=4.5V(Typ) ●Highdensitycel

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3090K

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3090Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=90A RDS(ON)=3.4mΩ(typical)@VGS=10V RDS(ON)=6.9mΩ(typical)@VGS=4.5V ●Highdensity

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3095G

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3095Gusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications. Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectification

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3095K

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3095Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=95A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE30H10BG

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H10BGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcan beusedinawidevarietyofapplications. Application ●Powerswitchingapplication ●Hardswitchedandhighfrequencycircuits ●Uninterruptiblepowersuppl

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    NCE3

  • 制造商:

    CIT

  • 制造商全稱:

    CIT Relay & Switch

  • 功能描述:

    CIT SWITCH

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SOT-23
8866666
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20+
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7915
NCE/新潔能 NCE3065K SOP8 20+
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SK
22+
SOT89
48530
原裝正品
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24+
DFN3*3
100000
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ROHS .original
SOT-23(SOT-23-3)
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13146
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NCE
22+
SOT-23
61241
全新原裝
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新潔能NCE
23+
TO-252-2
19790
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SOT23
3500
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95000
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更多NCE3供應(yīng)商 更新時(shí)間2024-12-24 8:46:00